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Laser-assisted deposition of bn films on InP for MIS applications

  • Paul, T. K.
  • Bhattacharya, P.
  • Bose, D. N.
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Publication date
November 1989
Icon DOI
10.1049/el:19891075
Publisher
Institution of Engineering and Technology

Abstract

Thin films of boron nitride (500-1000&#197;) were deposited on InP using a Q-switched ruby laser. Films were found to have a dielectric constant of 3.28, resistivity of 5&#215; 10<SUP>11</SUP> &#937; cm and bandgap of 4.1 eV. The minimum interface state density for the Al/BN/InP system was 6.2 &#215; 10<SUP>10</SUP> cm<SUP>-2</SUP> eV<SUP>-1</SUP>, 0.5 below the conduction band

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