Porous silicon layers formed by electrochemical anodizing show photoluminescence in the visible region. We report on the effect of chemical treatments such as hydrofluoric acid dip, ammonium fluoride solution treatment and boiling water treatment on the photoluminescence of porous silicon. In view of our results the mechanism of photoluminescence of porous silicon is discussed
In 1990, L.T. Canham discovered RT tunable photoluminescence properties of Porous Silicon (PS). At t...
Porous silicon (PS) films were prepared by lateral anodization of crystalline silicon in HF based so...
Porous-silicon layers were prepared by anodic oxidation of mono- and multi-crystalline Si substrates...
Porous silicon layers formed by electrochemical anodizing show photoluminescence in the visible regi...
In this work, we obtained porous silicon with different porosity by electrochemical etching and stud...
In this work, we obtained porous silicon with different porosity by electrochemical etching and stud...
In this work, we obtained porous silicon with different porosity by electrochemical etching and stud...
Luminescent porous silicon is formed by anodization of silicon in HF acid in the dark and then under...
The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has ...
Abstract. Porous silicon (PS) with 6.13 nm average pore diameter, 20.6μm thickness layer and 70.8 % ...
The main characteristics of porous silicon and the different charge exchanges involved in the format...
The aim of this paper is the study of porous Si prepared by preferential anodic dissolution in conce...
Electrochemical oxidation of porous silicon (PSi) produces a surface that is covered with native sil...
Recently, porous silicon (PS) was intensely studied by researcher due to its photoluminescence (PL)...
The visible luminescence caused by anodic oxidation of p-type porous silicon has been studied. It is...
In 1990, L.T. Canham discovered RT tunable photoluminescence properties of Porous Silicon (PS). At t...
Porous silicon (PS) films were prepared by lateral anodization of crystalline silicon in HF based so...
Porous-silicon layers were prepared by anodic oxidation of mono- and multi-crystalline Si substrates...
Porous silicon layers formed by electrochemical anodizing show photoluminescence in the visible regi...
In this work, we obtained porous silicon with different porosity by electrochemical etching and stud...
In this work, we obtained porous silicon with different porosity by electrochemical etching and stud...
In this work, we obtained porous silicon with different porosity by electrochemical etching and stud...
Luminescent porous silicon is formed by anodization of silicon in HF acid in the dark and then under...
The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has ...
Abstract. Porous silicon (PS) with 6.13 nm average pore diameter, 20.6μm thickness layer and 70.8 % ...
The main characteristics of porous silicon and the different charge exchanges involved in the format...
The aim of this paper is the study of porous Si prepared by preferential anodic dissolution in conce...
Electrochemical oxidation of porous silicon (PSi) produces a surface that is covered with native sil...
Recently, porous silicon (PS) was intensely studied by researcher due to its photoluminescence (PL)...
The visible luminescence caused by anodic oxidation of p-type porous silicon has been studied. It is...
In 1990, L.T. Canham discovered RT tunable photoluminescence properties of Porous Silicon (PS). At t...
Porous silicon (PS) films were prepared by lateral anodization of crystalline silicon in HF based so...
Porous-silicon layers were prepared by anodic oxidation of mono- and multi-crystalline Si substrates...