Design of a RF communication receiver front-end for ultra-low power and voltage applications in a FDSOI 28nm technology

The advances in the semiconductor and wireless industry have enabled the expansion of new paradigms, which have given rise to concepts like Internet of Things (IoT). Apart from qualities like size, speed or cost, the ever-increasing demand for autonomy focuses all design efforts in the minimization of power consumption. Scaling technologies and the request to reduce power consumption have pushed designers towards lower supply voltages. Despite the fact that technology scalability allows for faster transistors, radio-frequency (RF) integrated circuit (IC) design accuses the reduction of the voltage supply through frequency response degradation, which significantly deteriorates the overall performance. Analog and RF circuits in highend applications require substantial gate voltage overdrive to maintain device speed, which further complicates the design due to the reduction of voltage headroom. As a consequence, the necessity to develop circuit topologies capable to deal with low-power and low-voltage stringent constraints well suited to applications requiring long battery life and low cost emerges. This work aims to implement a low-noise amplifier and mixer stages of a radio-frequency receiver front-end working under an ultra-low power (< 100 ?W) and ultra-low voltage (< 0.8V) scenario while targeting decent overall performance. To cope with the stringent power requirements, 28nm FD-SOI technology will be used to take maximum profit of aggressive forward body bias and enhance transistor performance