Add to ORKGWith continued technology scaling, process variations will be especially detrimental to six-transistor static memory structures (6T SRAMs). A memory architecture using three-transistor, one-diode DRAM (3T1D) cells in the L1 data cache tolerates wide process variations with little performance degradation, making it a promising choice for on-chip cache structures for next-generation microprocessors.Peer Reviewe
Conventional six-transistor (6T) memory cell has an intrinsic data stability problem due to directly...
Abstract. The memory wall (the gap between processing and storage speeds) remains a concern to compu...
As the CMOS technology continues to scale down to achieve higher performance, considerable power dis...
With continued technology scaling, process variations will be especially detrimental to six-transist...
On-chip memories consume a significant portion of the overall die space and power in modern micropro...
3T1D cell has been stated as a valid alternative to be implemented on L1 memory cache to substitute ...
Memory circuits are playing a key role in complex multicore systems with both data and instructions ...
This thesis presents a novel six-transistor SRAM intended for advanced microprocessor cache applicat...
Best DCIS Paper Award 20123T1D cell has been stated as a valid alternative to be implemented on L1 m...
textOne of the major limiters to computer systems and systems on chip (SOC) designs is accessing the...
Current applications demand larger on-chip memory capacity since off-chip memory accesses be-come a ...
Abstract — STT-RAM is an emerging NVRAM technology that promises high density, low energy and a comp...
Process variations in integrated circuits have significant impact on their performance, leakage and ...
Multiple-channel die-stacked DRAMs have been used for maximizing the performance and minimizing the ...
Static Random Access Memory (SRAM)- based cache is one of the most important components of state-of-...
Conventional six-transistor (6T) memory cell has an intrinsic data stability problem due to directly...
Abstract. The memory wall (the gap between processing and storage speeds) remains a concern to compu...
As the CMOS technology continues to scale down to achieve higher performance, considerable power dis...
With continued technology scaling, process variations will be especially detrimental to six-transist...
On-chip memories consume a significant portion of the overall die space and power in modern micropro...
3T1D cell has been stated as a valid alternative to be implemented on L1 memory cache to substitute ...
Memory circuits are playing a key role in complex multicore systems with both data and instructions ...
This thesis presents a novel six-transistor SRAM intended for advanced microprocessor cache applicat...
Best DCIS Paper Award 20123T1D cell has been stated as a valid alternative to be implemented on L1 m...
textOne of the major limiters to computer systems and systems on chip (SOC) designs is accessing the...
Current applications demand larger on-chip memory capacity since off-chip memory accesses be-come a ...
Abstract — STT-RAM is an emerging NVRAM technology that promises high density, low energy and a comp...
Process variations in integrated circuits have significant impact on their performance, leakage and ...
Multiple-channel die-stacked DRAMs have been used for maximizing the performance and minimizing the ...
Static Random Access Memory (SRAM)- based cache is one of the most important components of state-of-...
Conventional six-transistor (6T) memory cell has an intrinsic data stability problem due to directly...
Abstract. The memory wall (the gap between processing and storage speeds) remains a concern to compu...
As the CMOS technology continues to scale down to achieve higher performance, considerable power dis...