Add to ORKGAn equivalent circuit model to predict lateral modes occurring in real BAW resonators is proposed. The circuit model has been validated with FEM simulations of FBAR resonators and also with measurements of SMR resonators. The model allows to predict the electrical response of square-shaped and rectangular-shaped resonators without limitation on dimensions.Peer Reviewe
A 2-D model is developed for calculating lateral acoustical coupling between adjacent thin film BAW ...
A 2-D model is developed for calculating lateral acoustical coupling between adjacent thin film BAW ...
Abstract—This paper presents a new equivalent-circuit model of SiBARs, derived in a mathematically r...
An equivalent circuit model to predict lateral modes occurring in real BAW resonators is proposed. T...
An equivalent circuit model to predict lateral modes occurring in real BAW resonators is proposed. T...
An equivalent circuital model is proposed for the lateral modes of a BAW resonator. It is based in t...
An equivalent circuital model is proposed for the lateral modes of a BAW resonator. It is based in t...
Lateral modes are responsible for the in-band spurious resonances that appear on BAW resonators, deg...
An equivalent circuit model is proposed in order to model the Border Ring (BR) spurious modes on Typ...
An equivalent circuit model is proposed in order to model the Border Ring (BR) spurious modes on Typ...
Lateral resonances occurring in bulk acoustic wave resonators contribute to the device operation, e....
Lateral resonances occurring in bulk acoustic wave resonators contribute to the device operation, e....
The Transmission Line Matrix (TLM) method is used to model and predict lateral spurious resonances i...
A simple model is developed for calculating lateral acoustical coupling between adjacent thin film B...
Abstract:- The circuit models aimed to reproduce both the amplitude-frequency and the intermodulatio...
A 2-D model is developed for calculating lateral acoustical coupling between adjacent thin film BAW ...
A 2-D model is developed for calculating lateral acoustical coupling between adjacent thin film BAW ...
Abstract—This paper presents a new equivalent-circuit model of SiBARs, derived in a mathematically r...
An equivalent circuit model to predict lateral modes occurring in real BAW resonators is proposed. T...
An equivalent circuit model to predict lateral modes occurring in real BAW resonators is proposed. T...
An equivalent circuital model is proposed for the lateral modes of a BAW resonator. It is based in t...
An equivalent circuital model is proposed for the lateral modes of a BAW resonator. It is based in t...
Lateral modes are responsible for the in-band spurious resonances that appear on BAW resonators, deg...
An equivalent circuit model is proposed in order to model the Border Ring (BR) spurious modes on Typ...
An equivalent circuit model is proposed in order to model the Border Ring (BR) spurious modes on Typ...
Lateral resonances occurring in bulk acoustic wave resonators contribute to the device operation, e....
Lateral resonances occurring in bulk acoustic wave resonators contribute to the device operation, e....
The Transmission Line Matrix (TLM) method is used to model and predict lateral spurious resonances i...
A simple model is developed for calculating lateral acoustical coupling between adjacent thin film B...
Abstract:- The circuit models aimed to reproduce both the amplitude-frequency and the intermodulatio...
A 2-D model is developed for calculating lateral acoustical coupling between adjacent thin film BAW ...
A 2-D model is developed for calculating lateral acoustical coupling between adjacent thin film BAW ...
Abstract—This paper presents a new equivalent-circuit model of SiBARs, derived in a mathematically r...