Resistive random access memories (RRAMs)have arisen as a competitive candidate for non-volatile memories due to their scalability, simple structure, fast switching speed and compatibility with conventional back-end processes. The stochastic switching mechanism and intrinsic variability of RRAMs will poses challenges that must be overcome prior to their massive memory commercialization. However, these very same features open a wide range of potential applications for these devices in hardware security. In this context, this work proposes the generation of a random bit by means of simultaneous write opeation of two paralled cells so that only one of them unpredictably switches its state. Electrical simulations confirm the strong stochastic be...
International audienceA novel True Random Number Generator circuit fabricated in a 130nm HfO2-based ...
With CMOS technology scaling reaching its limitations rigorous research of alternate and competent t...
Resistive switching random access memory (RRAM) is a leading candidate for next-generation nonvolati...
Resistive random access memories (RRAMs)have arisen as a competitive candidate for non-volatile mem...
© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for...
In this letter a cell with the parallel combination of two TiN/Ti/HfO2/W resistive random access mem...
International audienceRecently, memristors received considerable attention in various applications. ...
International audienceThe rapid development of low power, high density, high performance SoCs has pu...
In this letter, the serial configuration of two RRAMs is used as a basic cell to generate an unpredi...
International audienceThe intrinsic variability of the switching parameters in resistive memories ha...
With the widespread use of mobile computing and internet of things, secured communication and chip a...
International audienceA novel True Random Number Generator circuit fabricated in a 130nm HfO2-based ...
With rapid advancements in electronic gadgets, the security and privacy aspects of these devices are...
© 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for a...
The stochastic nature of the switching mechanism of phase-change memory (PCM) arrays, which is a dra...
International audienceA novel True Random Number Generator circuit fabricated in a 130nm HfO2-based ...
With CMOS technology scaling reaching its limitations rigorous research of alternate and competent t...
Resistive switching random access memory (RRAM) is a leading candidate for next-generation nonvolati...
Resistive random access memories (RRAMs)have arisen as a competitive candidate for non-volatile mem...
© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for...
In this letter a cell with the parallel combination of two TiN/Ti/HfO2/W resistive random access mem...
International audienceRecently, memristors received considerable attention in various applications. ...
International audienceThe rapid development of low power, high density, high performance SoCs has pu...
In this letter, the serial configuration of two RRAMs is used as a basic cell to generate an unpredi...
International audienceThe intrinsic variability of the switching parameters in resistive memories ha...
With the widespread use of mobile computing and internet of things, secured communication and chip a...
International audienceA novel True Random Number Generator circuit fabricated in a 130nm HfO2-based ...
With rapid advancements in electronic gadgets, the security and privacy aspects of these devices are...
© 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for a...
The stochastic nature of the switching mechanism of phase-change memory (PCM) arrays, which is a dra...
International audienceA novel True Random Number Generator circuit fabricated in a 130nm HfO2-based ...
With CMOS technology scaling reaching its limitations rigorous research of alternate and competent t...
Resistive switching random access memory (RRAM) is a leading candidate for next-generation nonvolati...