Add to ORKGA new method for measuring the four noise parameters (NPs) of a transistor is presented. It is based on the determination of its intrinsic noise matrix elements (C11INT, C22INT, Re(C12INT), Im(C12INT)) by fitting the measured device noise figure for a matched source reflection coefficient (F50) at a number of frequency points. In contrast to previous works, no restrictive assumptions are made on the intrinsic noise sources.Peer Reviewe
In this paper a novel approach for determining the four noise parameters of FET devices over frequen...
In this paper a novel approach for determining the four noise parameters of FET devices over frequen...
In this paper a novel approach for determining the four noise parameters of FET devices over frequen...
A new method for measuring the four noise parameters (NPs) of a transistor is presented. It is based...
A new method for measuring the four noise parameters (NPs) of a transistor is presented. It is based...
A new method for measuring the four noise parameters (NPs) of a transistor is presented. It is based...
A new method for measuring the four noise parameters (NPs) of a transistor is presented. It is based...
A measurement and analysis technique has been developed that allo for, after s-parameter measurement...
A novel method for measuring the four noise parameters of a field-effect transistor (FET) is present...
A method for measuring the four noise parameters of a transistor in the microwave range using a conf...
A novel method for measuring the four noise parameters of a field-effect transistor (FET) is present...
A novel method for measuring the four noise parameters of a field-effect transistor (FET) is present...
A method for measuring the four noise parameters of a transistor in the microwave range using a conf...
A method for measuring the four noise parameters of a transistor in the microwave range using a conf...
A method for measuring the four noise parameters of a transistor in the microwave range using a conf...
In this paper a novel approach for determining the four noise parameters of FET devices over frequen...
In this paper a novel approach for determining the four noise parameters of FET devices over frequen...
In this paper a novel approach for determining the four noise parameters of FET devices over frequen...
A new method for measuring the four noise parameters (NPs) of a transistor is presented. It is based...
A new method for measuring the four noise parameters (NPs) of a transistor is presented. It is based...
A new method for measuring the four noise parameters (NPs) of a transistor is presented. It is based...
A new method for measuring the four noise parameters (NPs) of a transistor is presented. It is based...
A measurement and analysis technique has been developed that allo for, after s-parameter measurement...
A novel method for measuring the four noise parameters of a field-effect transistor (FET) is present...
A method for measuring the four noise parameters of a transistor in the microwave range using a conf...
A novel method for measuring the four noise parameters of a field-effect transistor (FET) is present...
A novel method for measuring the four noise parameters of a field-effect transistor (FET) is present...
A method for measuring the four noise parameters of a transistor in the microwave range using a conf...
A method for measuring the four noise parameters of a transistor in the microwave range using a conf...
A method for measuring the four noise parameters of a transistor in the microwave range using a conf...
In this paper a novel approach for determining the four noise parameters of FET devices over frequen...
In this paper a novel approach for determining the four noise parameters of FET devices over frequen...
In this paper a novel approach for determining the four noise parameters of FET devices over frequen...