Modern generations of CMOS technology nodes are facing critical causes of hardware reliability failures, which were not significant in the past. Such vulnerabilities make it essential to investigate new robust design strategies at the Nanoscale circuit system level. In this paper we have introduced an adaptive proactive reconfiguration technique that considers the inherent process variability (variability-aware) and BTI aging, and effectively enlarges the SRAM lifetime.Peer Reviewe
The inter-die and intra-die variations in process parameters result in large number of failures in a...
The digital technology in the nanoelectronic era is based on intensive data processing and battery-b...
CMOS downsizing has posed a growing concern about circuit lifetime reliability. Bias Temperature Ins...
Process variations and device aging have a significant impact on the reliability and performance of ...
Process variations and device aging have a significant impact on the reliability and performance of...
Nanoscale circuits are subject to a wide range of new limiting phenomena making essential to investi...
Scaling of device dimensions toward nano-scale regime has made it essential to innovate novel design...
Nanoscale circuits are subject to a wide range of new limiting phenomena making essential to investi...
Scaling of device dimensions toward nano-scale regime has made it essential to innovate novel design...
The proactive reconfiguration is an emerging technique that enlarges the lifetime of memory systems ...
The proactive reconfiguration is an emerging technique that enlarges the lifetime of memory systems ...
This work presents a test and measurement technique to monitor aging and process variation status of...
This work presents a test and measurement technique to monitor aging and process variation status of...
Transistor aging effects (NBTI and PBTI) impact the reliability of SRAM in Nano-scale CMOS technolog...
© 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for a...
The inter-die and intra-die variations in process parameters result in large number of failures in a...
The digital technology in the nanoelectronic era is based on intensive data processing and battery-b...
CMOS downsizing has posed a growing concern about circuit lifetime reliability. Bias Temperature Ins...
Process variations and device aging have a significant impact on the reliability and performance of ...
Process variations and device aging have a significant impact on the reliability and performance of...
Nanoscale circuits are subject to a wide range of new limiting phenomena making essential to investi...
Scaling of device dimensions toward nano-scale regime has made it essential to innovate novel design...
Nanoscale circuits are subject to a wide range of new limiting phenomena making essential to investi...
Scaling of device dimensions toward nano-scale regime has made it essential to innovate novel design...
The proactive reconfiguration is an emerging technique that enlarges the lifetime of memory systems ...
The proactive reconfiguration is an emerging technique that enlarges the lifetime of memory systems ...
This work presents a test and measurement technique to monitor aging and process variation status of...
This work presents a test and measurement technique to monitor aging and process variation status of...
Transistor aging effects (NBTI and PBTI) impact the reliability of SRAM in Nano-scale CMOS technolog...
© 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for a...
The inter-die and intra-die variations in process parameters result in large number of failures in a...
The digital technology in the nanoelectronic era is based on intensive data processing and battery-b...
CMOS downsizing has posed a growing concern about circuit lifetime reliability. Bias Temperature Ins...