Add to ORKGIn silicon bulk CMOS technology the variability of the device parameters is a key drawback that may be a limiting factor for further miniaturizing nodes. New nanoscale beyond-CMOS devices are being studied such as carbon nanotubes (CNTs). The goal of this paper is to evaluate the parameter variability in Carbon Nanotube Field Effect Transistors (CNFETs) and its potential capability to be a promising alternative to Si-CMOS technology. The impact of the carbon nanotube diameter variations as well as the presence of metallic carbon nanotubes in the transistor are analyzed (device level). This variability model is used to make a comparison between Si-MOSFET and CNFET Static Random Access Memory (SRAM) 6T cells (circuit level).Peer Reviewe
Current carbon nanotube (CNT) synthesis processes are not perfect. One of the most critical issue is...
Transistor (MOSFET). Moore’s law states that, design performance improves by reduction in gate lengt...
Current carbon nanotube (CNT) synthesis processes are not perfect. One of the most critical issue is...
In silicon bulk CMOS technology the variability of the device parameters is a key drawback that may ...
In silicon bulk CMOS technology the variability of the device parameters is a key drawback that may ...
In silicon bulk CMOS technology the variability of the device parameters is a key drawback that may ...
Statistical device variability may be a limiting factor for further miniaturizing nodes in silicon b...
Statistical device variability may be a limiting factor for further miniaturizing nodes in silicon b...
In 1925, Lilienfeld patented the basic principle of field effect transistor (FET). Thirty-four years...
In 1925, Lilienfeld patented the basic principle of field effect transistor (FET). Thirty-four years...
Carbon nanotube field-effect transistors (CNFETs) are promising candidates to substitute silicon tra...
In this paper we study the effects of Single Walled Carbon Nanotube (SWCNT) diameter variations on p...
Abstract: CMOS devices are scaling down to nano ranges resulting in increased process variations and...
This thesis describes the effort in designing SRAMs based on Carbon Nanotube Field Effect Transistor...
Current carbon nanotube (CNT) synthesis processes are not perfect. One of the most critical issue is...
Current carbon nanotube (CNT) synthesis processes are not perfect. One of the most critical issue is...
Transistor (MOSFET). Moore’s law states that, design performance improves by reduction in gate lengt...
Current carbon nanotube (CNT) synthesis processes are not perfect. One of the most critical issue is...
In silicon bulk CMOS technology the variability of the device parameters is a key drawback that may ...
In silicon bulk CMOS technology the variability of the device parameters is a key drawback that may ...
In silicon bulk CMOS technology the variability of the device parameters is a key drawback that may ...
Statistical device variability may be a limiting factor for further miniaturizing nodes in silicon b...
Statistical device variability may be a limiting factor for further miniaturizing nodes in silicon b...
In 1925, Lilienfeld patented the basic principle of field effect transistor (FET). Thirty-four years...
In 1925, Lilienfeld patented the basic principle of field effect transistor (FET). Thirty-four years...
Carbon nanotube field-effect transistors (CNFETs) are promising candidates to substitute silicon tra...
In this paper we study the effects of Single Walled Carbon Nanotube (SWCNT) diameter variations on p...
Abstract: CMOS devices are scaling down to nano ranges resulting in increased process variations and...
This thesis describes the effort in designing SRAMs based on Carbon Nanotube Field Effect Transistor...
Current carbon nanotube (CNT) synthesis processes are not perfect. One of the most critical issue is...
Current carbon nanotube (CNT) synthesis processes are not perfect. One of the most critical issue is...
Transistor (MOSFET). Moore’s law states that, design performance improves by reduction in gate lengt...
Current carbon nanotube (CNT) synthesis processes are not perfect. One of the most critical issue is...