In silicon bulk CMOS technology the variability of the device parameters is a key drawback that may be a limiting factor for further miniaturizing nodes. Novel nanoscale beyond- CMOS devices are being studied such as carbon nanotubes (CNTs). The goal of this paper is to evaluate the parameter variability in Carbon Nanotube Field Effect Transistors (CNFETs) and their potential capability to be a promising alternative to Si-CMOS technology.Peer Reviewe
As the scaling down of silicon MOSFET is approaching its utmost limit, different materials are effec...
Scaling down of Semiconductor Devices in nanometer range has been almost stagnated due to various ob...
Scaling process of silicon transistor, particularly MOSFET, in the past decades had increased the pe...
In silicon bulk CMOS technology the variability of the device parameters is a key drawback that may ...
In silicon bulk CMOS technology the variability of the device parameters is a key drawback that may ...
In silicon bulk CMOS technology the variability of the device parameters is a key drawback that may ...
Statistical device variability may be a limiting factor for further miniaturizing nodes in silicon b...
Statistical device variability may be a limiting factor for further miniaturizing nodes in silicon b...
In 1925, Lilienfeld patented the basic principle of field effect transistor (FET). Thirty-four years...
In 1925, Lilienfeld patented the basic principle of field effect transistor (FET). Thirty-four years...
Current carbon nanotube (CNT) synthesis processes are not perfect. One of the most critical issue is...
Current carbon nanotube (CNT) synthesis processes are not perfect. One of the most critical issue is...
Carbon nanotube field-effect transistors (CNFETs) are promising candidates to substitute silicon tra...
As the scaling of Si MOSFET approaches towards its limiting value, new alternatives are coming up to...
Current carbon nanotube (CNT) synthesis processes are not perfect. One of the most critical issue is...
As the scaling down of silicon MOSFET is approaching its utmost limit, different materials are effec...
Scaling down of Semiconductor Devices in nanometer range has been almost stagnated due to various ob...
Scaling process of silicon transistor, particularly MOSFET, in the past decades had increased the pe...
In silicon bulk CMOS technology the variability of the device parameters is a key drawback that may ...
In silicon bulk CMOS technology the variability of the device parameters is a key drawback that may ...
In silicon bulk CMOS technology the variability of the device parameters is a key drawback that may ...
Statistical device variability may be a limiting factor for further miniaturizing nodes in silicon b...
Statistical device variability may be a limiting factor for further miniaturizing nodes in silicon b...
In 1925, Lilienfeld patented the basic principle of field effect transistor (FET). Thirty-four years...
In 1925, Lilienfeld patented the basic principle of field effect transistor (FET). Thirty-four years...
Current carbon nanotube (CNT) synthesis processes are not perfect. One of the most critical issue is...
Current carbon nanotube (CNT) synthesis processes are not perfect. One of the most critical issue is...
Carbon nanotube field-effect transistors (CNFETs) are promising candidates to substitute silicon tra...
As the scaling of Si MOSFET approaches towards its limiting value, new alternatives are coming up to...
Current carbon nanotube (CNT) synthesis processes are not perfect. One of the most critical issue is...
As the scaling down of silicon MOSFET is approaching its utmost limit, different materials are effec...
Scaling down of Semiconductor Devices in nanometer range has been almost stagnated due to various ob...
Scaling process of silicon transistor, particularly MOSFET, in the past decades had increased the pe...
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