Memory circuits are playing a key role in complex multicore systems with both data and instructions storage and mailbox communication functions. There is a general concern that conventional SRAM cell based on the 6T structure could exhibit serious limitations in future CMOS technologies due to the instability caused by transistor mismatching as well as for leakage consumption reasons. For L1 data caches the new cell 3T1D DRAM is considered a potential candidate to substitute 6T SRAMs. We first evaluate the impact of the positive bias temperature instability, PBTI, on the access and retention time of the 3T1D memory cell implemented with 45 nm technology. Then, we consider all sources of variations and the effect of the degradation caused by...
Write time is a critical component of memory performance, which often defines cycle time. In order t...
With continued technology scaling, process variations will be especially detrimental to six-transist...
Instability (NBTI) is becoming a major reliability problem in the semiconductor industry. NBTI Aging...
Memory circuits are playing a key role in complex multicore systems with both data and instructions ...
Bias Temperature Instability (BTI) is a major reliability issue in Nano-Scale CMOS Circuits. BTI eff...
We investigate the impact of negative-bias temperature instability (NBTI) on the degradation of the ...
Abstract — As dimensions of MOS devices have been scaled down, new reliability problems are coming i...
We analyzed the impact of negative bias temperature instability (NBTI) on the single-event upset rat...
3T1D cell has been stated as a valid alternative to be implemented on L1 memory cache to substitute ...
Abstract. In current process technologies, NBTI (negative bias temperature instability) has the most...
This paper presents the effect of negative bias temperature instability (NBTI) on a 6T CMOS SRAM cel...
In current process technologies, NBTI (negative bias temperature instability) has the most severe ag...
Abstract—Negative-bias temperature instability (NBTI) and positive-bias temperature instability (PBT...
the potential to become one of the main show-stoppers of circuit reliability in nanometer scale devi...
On-chip memories consume a significant portion of the overall die space and power in modern micropro...
Write time is a critical component of memory performance, which often defines cycle time. In order t...
With continued technology scaling, process variations will be especially detrimental to six-transist...
Instability (NBTI) is becoming a major reliability problem in the semiconductor industry. NBTI Aging...
Memory circuits are playing a key role in complex multicore systems with both data and instructions ...
Bias Temperature Instability (BTI) is a major reliability issue in Nano-Scale CMOS Circuits. BTI eff...
We investigate the impact of negative-bias temperature instability (NBTI) on the degradation of the ...
Abstract — As dimensions of MOS devices have been scaled down, new reliability problems are coming i...
We analyzed the impact of negative bias temperature instability (NBTI) on the single-event upset rat...
3T1D cell has been stated as a valid alternative to be implemented on L1 memory cache to substitute ...
Abstract. In current process technologies, NBTI (negative bias temperature instability) has the most...
This paper presents the effect of negative bias temperature instability (NBTI) on a 6T CMOS SRAM cel...
In current process technologies, NBTI (negative bias temperature instability) has the most severe ag...
Abstract—Negative-bias temperature instability (NBTI) and positive-bias temperature instability (PBT...
the potential to become one of the main show-stoppers of circuit reliability in nanometer scale devi...
On-chip memories consume a significant portion of the overall die space and power in modern micropro...
Write time is a critical component of memory performance, which often defines cycle time. In order t...
With continued technology scaling, process variations will be especially detrimental to six-transist...
Instability (NBTI) is becoming a major reliability problem in the semiconductor industry. NBTI Aging...