The formation energy, geometry, and electronic structure of isolated oxygen and aluminum vacancies in bulk and on the (0001) surface of corundum ( α − Al 2 O 3 ) have been investigated by means of periodic calculations in the framework of density functional theory within the generalized gradient approximation and large supercells. The energy cost to form an oxygen vacancy in the bulk is estimated to be of the order of 10 eV, whereas that corresponding to the formation of Al vacancies is found to be at least a 30% larger. The relaxation of the material is rather small for both defects. The removal of an oxygen atom in bulk α − Al 2 O 3 is accompanied by the appearance of an impurity level in the gap, which is a strong indication of elect...
The modifications in atomistic structure, chemical bonding, and energetics induced by substitutional...
The electronic properties of the oxygen vacancy and interstitial in amorphous Al2O3 are studied via ...
Abstract A combination of two first-principles electronic structure calculation methods in the frame...
The formation energy, geometry, and electronic structure of isolated oxygen and aluminum vacancies i...
The electronic structure and spectroscopic features of the optical spectra of oxygen vacancies in th...
The electronic structure and spectroscopic features of the optical spectra of oxygen vacancies in th...
The oxygen vacancy diffusion in Al2O3 with a corundum structure is investigated by the projector aug...
Aluminum oxides and oxidation mechanisms are topics for extensive research. One good reason for this...
The energetics, lattice relaxation, and the defect-induced states of st single O vacancy in alpha-Al...
Aluminum oxides and oxidation mechanisms are topics for extensive research. One good reason for this...
The atomic-scale structure, relative stability and infrared spectroscopic properties of OH defects i...
The electronic properties of the oxygen vacancy and interstitial in amorphous Al2O3 are studied via ...
The electronic properties of the oxygen vacancy and interstitial in amorphous Al2O3 are studied via ...
The electronic properties of the oxygen vacancy and interstitial in amorphous Al2O3 are studied via ...
Understanding the growth of Al2O3 scales requires knowledge of the details of the chemical reactions...
The modifications in atomistic structure, chemical bonding, and energetics induced by substitutional...
The electronic properties of the oxygen vacancy and interstitial in amorphous Al2O3 are studied via ...
Abstract A combination of two first-principles electronic structure calculation methods in the frame...
The formation energy, geometry, and electronic structure of isolated oxygen and aluminum vacancies i...
The electronic structure and spectroscopic features of the optical spectra of oxygen vacancies in th...
The electronic structure and spectroscopic features of the optical spectra of oxygen vacancies in th...
The oxygen vacancy diffusion in Al2O3 with a corundum structure is investigated by the projector aug...
Aluminum oxides and oxidation mechanisms are topics for extensive research. One good reason for this...
The energetics, lattice relaxation, and the defect-induced states of st single O vacancy in alpha-Al...
Aluminum oxides and oxidation mechanisms are topics for extensive research. One good reason for this...
The atomic-scale structure, relative stability and infrared spectroscopic properties of OH defects i...
The electronic properties of the oxygen vacancy and interstitial in amorphous Al2O3 are studied via ...
The electronic properties of the oxygen vacancy and interstitial in amorphous Al2O3 are studied via ...
The electronic properties of the oxygen vacancy and interstitial in amorphous Al2O3 are studied via ...
Understanding the growth of Al2O3 scales requires knowledge of the details of the chemical reactions...
The modifications in atomistic structure, chemical bonding, and energetics induced by substitutional...
The electronic properties of the oxygen vacancy and interstitial in amorphous Al2O3 are studied via ...
Abstract A combination of two first-principles electronic structure calculation methods in the frame...