In this letter, we have investigated hydrogen degradation of InP HEMT's with Ti/Pt/Au gates. We have found that V/sub T/ shifts negative after exposure to hydrogen, and exhibits an L/sub G/ and orientation dependence. We postulate that /spl Delta/V/sub T/ is at least in part due to the piezoelectric effect. Hydrogen exposure leads to the formation of TiH/sub x/, producing compressive stress in the gate. This stress induces a piezoelectric charge distribution in the semiconductor that shifts the threshold voltage. We have independently confirmed TiH/sub x/ formation under our experimental conditions through Auger measurements. Separate radius-of-curvature measurements have also independently confirmed that Ti/Pt films become compressively st...
We explained how H2O degrades amorphous-InGaZnO thin-film transistors. H2O caused serious degradatio...
We subjected Organic TFTs to positive and negative constant gate voltage stresses. Stress not only i...
AbstractDistribution of hydrogen-induced dipoles in platinum-titanium-oxygen (Pt-Ti-O) gate structur...
In this letter, we have investigated hydrogen degradation of InP HEMT's with Ti/Pt/Au gates. We have...
In this work, electrical measurements show that the breakdown voltage,BVDG, of InP HEMTs increases f...
This work describes results of hydrogen degradation experiments performed on Al/Ti-gate AlGaAs/GaAs ...
Abstract—In this letter, we have investigated hydrogen degra-dation of InP HEMT’s with Ti/Pt/Au gate...
One of today\u2019s challenges to enable the improved electrical performances and reliability of mic...
Lead-Zirconate-Titanate Pb(Zr,Ti)O₃ (PZT) based actuators are evaluated by automotive industry for a...
Having been exposed to hydrogen plasma, Te-doped GaAs wafers were deposited with metal Ti, to form T...
The threshold voltage instability (Vth) in indium-gallium-zinc oxide thin film transistor was invest...
This study examined the effect of gate dielectric materials on the light-induced bias instability of...
Hydrogen passivation of heteroepitaxial InP solar cells is of recent interest for deactivation of di...
It is shown that the use of hydrogen-containing gases such as CHF3/H2, CHF3, CH4/H2, and CH4/He in r...
Piezoelectric actuators are increasingly used for the electronic control of fuel injector opening va...
We explained how H2O degrades amorphous-InGaZnO thin-film transistors. H2O caused serious degradatio...
We subjected Organic TFTs to positive and negative constant gate voltage stresses. Stress not only i...
AbstractDistribution of hydrogen-induced dipoles in platinum-titanium-oxygen (Pt-Ti-O) gate structur...
In this letter, we have investigated hydrogen degradation of InP HEMT's with Ti/Pt/Au gates. We have...
In this work, electrical measurements show that the breakdown voltage,BVDG, of InP HEMTs increases f...
This work describes results of hydrogen degradation experiments performed on Al/Ti-gate AlGaAs/GaAs ...
Abstract—In this letter, we have investigated hydrogen degra-dation of InP HEMT’s with Ti/Pt/Au gate...
One of today\u2019s challenges to enable the improved electrical performances and reliability of mic...
Lead-Zirconate-Titanate Pb(Zr,Ti)O₃ (PZT) based actuators are evaluated by automotive industry for a...
Having been exposed to hydrogen plasma, Te-doped GaAs wafers were deposited with metal Ti, to form T...
The threshold voltage instability (Vth) in indium-gallium-zinc oxide thin film transistor was invest...
This study examined the effect of gate dielectric materials on the light-induced bias instability of...
Hydrogen passivation of heteroepitaxial InP solar cells is of recent interest for deactivation of di...
It is shown that the use of hydrogen-containing gases such as CHF3/H2, CHF3, CH4/H2, and CH4/He in r...
Piezoelectric actuators are increasingly used for the electronic control of fuel injector opening va...
We explained how H2O degrades amorphous-InGaZnO thin-film transistors. H2O caused serious degradatio...
We subjected Organic TFTs to positive and negative constant gate voltage stresses. Stress not only i...
AbstractDistribution of hydrogen-induced dipoles in platinum-titanium-oxygen (Pt-Ti-O) gate structur...