Electrically active point defects in n-type 4H¿SiC

On the Quenched-In Defects in n-Type Silicon

Balasubramanyam, N
Kumar, V

January 1987

Electrical properties of deep levels introduced during quenching from high temperatures in VPE layer...

Radiation Defects Created in n‐Type 4H‐SiC by Electron Irradiation in the Energy Range of 1-10 MeV

Hazdra P.
Vobecký J.

January 2019

Radiation damage produced in 4H–SiC n–epilayers by electrons of different energies is presented. Jun...

Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC

Brodar T.
Capan I.
Radulovic V.
Snoj L.
Pastuovic Z.
Coutinho J.
Ohshima Takeshi

October 2018

This paper studies the electrically active deep level defects introduced in epitaxial n-type 4H-SiC ...

Electrically active point defects in n-type 4H¿SiC

Doyle, J. P.
Linnarsson, M. K.
Pellegrino, Paolo
Keskitalo, N.
Svensson, Bengt G.
Schoner, A.
Nordell, N.
Lindstrom, J. L.

April 2012

An electrically active defect has been observed at a level position of ∼ 0.70 eV below the conductio...

Investigations of defects introduced in 4H-SiC n-type epitaxial layers by hydrogen DC plasma

Ottaviani, L.
Yakimov, E.
Hidalgo Alcalde, Pedro
Martinuzzi, S.

January 2004

Hydrogen is known to passivate donor and acceptor levels in SiC bulk, and also at the surface by for...

Electrical characterization of electron beam exposure induced defects in epitaxially grown n-type silicon

Danga, Helga T.
Auret, F.D. (Francois Danie)
Tunhuma, Shandirai Malven
Omotoso, Ezekiel
Igumbor, Emmanuel
Meyer, W.E. (Walter Ernst)

June 2019

In this paper, we report on defects introduced in epitaxially grown n-type silicon (Si) during elect...

Study of electrically active defects in n-GaN layer

Soh, C.B.
Chi, D.Z.
Ramam, A.
Lim, H.F.
Chua, S.J.

December 2001

10.1016/S1369-8001(02)00025-2Materials Science in Semiconductor Processing46595-60

Effects of single-layer Shockley stacking faults on the transport properties of high-purity semi-insulating 4H–SiC

July 2015

none2The electrical properties of high-purity 4H–SiC epitaxial layers are investigated. The current ...

Influence of triangular defects on the electrical characteristics of 4H-SiC devices

Schoeck, J.
Schlichting, H.
Kallinger, B.
Erlbacher, T.
Rommel, M.
Bauer, A.J.

January 2018

Using a combination of photoluminescence and electrical characterization, defects in the epitaxial l...

Effect of crystal defects on the electrical behaviour of InP and SiGe epitaxial structures

Zs. J. Horváth
L. K. Orlov
V. Rakovics
N. L. Ivina
A. L. Tóth
E. S. Demidov
F. Riesz
V. I. Vdovin
Z. Pászti

July 2004

The defects in InP epitaxial structures (containing in part Pt nanoparticles) and SiGe/Si heterostr...

Electron-beam-induced current study of electrically active defects in 4H-SiC

Díaz-Guerra Viejo, Carlos
Piqueras de Noriega, Javier

January 2004

Electrically active defects in epitaxial, n-type, 4H-SiC have been investigated by electron-beam-ind...

Deep level defects in single ion regime implanted 4H-SiC epitaxial layers

Capan Ivana
Sato Shinichiro
Pastuovic Zeljko
Brodar Tomislav
Hoshino Norihiro
Tsuchida Hidekazu
Ohshima Takeshi

February 2019

We present a study of deep level defects created in isolated ion cascades produced in nitrogen-low-d...

Bandlike and localized states of extended defects in n-type In0.53Ga0.47As

Hsu, Po-Chun Brent
Simoen, Eddy
Merckling, Clement
Eneman, Geert
Mols, Yves
Alian, AliReza
Langer, Robert
Collaert, Nadine
Heyns, Marc

October 2018

Epitaxial GaAs for X-ray imaging

Sun, G. C.
Rao, R.
Makham, S.
Bourgoin, J. C.
Zhang, X. Y.
Gohier, R.
Masiello, F.
Haertwig, J.
Baruchel, J.
Ponchut, C.
Balocchi, Andrea
Marie, Xavier
Gilard, O.
Roch-Jeune, Isabelle
Pesant, J. C.

January 2011

11th International Workshop on Radiation Imaging Detectors, Czech Technical Univ, Inst Experimental ...

Point defects in compound semiconductor surfaces

Ebert, P.
Forschungszentrum Juelich GmbH (KFA) (Germany). Inst. fuer Festkoerperforschung
Technische Hochschule Aachen (Germany)

January 2001

The present work reviews atomic-scale properties of point defects and dopant atoms exposed in and be...

On the Quenched-In Defects in n-Type Silicon

Balasubramanyam, N
Kumar, V

January 1987

Electrical properties of deep levels introduced during quenching from high temperatures in VPE layer...

Radiation Defects Created in n‐Type 4H‐SiC by Electron Irradiation in the Energy Range of 1-10 MeV

Hazdra P.
Vobecký J.

January 2019

Radiation damage produced in 4H–SiC n–epilayers by electrons of different energies is presented. Jun...

Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC

Brodar T.
Capan I.
Radulovic V.
Snoj L.
Pastuovic Z.
Coutinho J.
Ohshima Takeshi

October 2018

This paper studies the electrically active deep level defects introduced in epitaxial n-type 4H-SiC ...

Electrically active point defects in n-type 4H¿SiC

Doyle, J. P.
Linnarsson, M. K.
Pellegrino, Paolo
Keskitalo, N.
Svensson, Bengt G.
Schoner, A.
Nordell, N.
Lindstrom, J. L.

April 2012

An electrically active defect has been observed at a level position of ∼ 0.70 eV below the conductio...

Investigations of defects introduced in 4H-SiC n-type epitaxial layers by hydrogen DC plasma

Ottaviani, L.
Yakimov, E.
Hidalgo Alcalde, Pedro
Martinuzzi, S.

January 2004

Hydrogen is known to passivate donor and acceptor levels in SiC bulk, and also at the surface by for...

Electrical characterization of electron beam exposure induced defects in epitaxially grown n-type silicon

Danga, Helga T.
Auret, F.D. (Francois Danie)
Tunhuma, Shandirai Malven
Omotoso, Ezekiel
Igumbor, Emmanuel
Meyer, W.E. (Walter Ernst)

June 2019

In this paper, we report on defects introduced in epitaxially grown n-type silicon (Si) during elect...

Study of electrically active defects in n-GaN layer

Soh, C.B.
Chi, D.Z.
Ramam, A.
Lim, H.F.
Chua, S.J.

December 2001

10.1016/S1369-8001(02)00025-2Materials Science in Semiconductor Processing46595-60

Effects of single-layer Shockley stacking faults on the transport properties of high-purity semi-insulating 4H–SiC

July 2015

none2The electrical properties of high-purity 4H–SiC epitaxial layers are investigated. The current ...

Influence of triangular defects on the electrical characteristics of 4H-SiC devices

Schoeck, J.
Schlichting, H.
Kallinger, B.
Erlbacher, T.
Rommel, M.
Bauer, A.J.

January 2018

Using a combination of photoluminescence and electrical characterization, defects in the epitaxial l...

Effect of crystal defects on the electrical behaviour of InP and SiGe epitaxial structures

Zs. J. Horváth
L. K. Orlov
V. Rakovics
N. L. Ivina
A. L. Tóth
E. S. Demidov
F. Riesz
V. I. Vdovin
Z. Pászti

July 2004

The defects in InP epitaxial structures (containing in part Pt nanoparticles) and SiGe/Si heterostr...

Electron-beam-induced current study of electrically active defects in 4H-SiC

Díaz-Guerra Viejo, Carlos
Piqueras de Noriega, Javier

January 2004

Electrically active defects in epitaxial, n-type, 4H-SiC have been investigated by electron-beam-ind...

Deep level defects in single ion regime implanted 4H-SiC epitaxial layers

Capan Ivana
Sato Shinichiro
Pastuovic Zeljko
Brodar Tomislav
Hoshino Norihiro
Tsuchida Hidekazu
Ohshima Takeshi

February 2019

We present a study of deep level defects created in isolated ion cascades produced in nitrogen-low-d...

Bandlike and localized states of extended defects in n-type In0.53Ga0.47As

Hsu, Po-Chun Brent
Simoen, Eddy
Merckling, Clement
Eneman, Geert
Mols, Yves
Alian, AliReza
Langer, Robert
Collaert, Nadine
Heyns, Marc

October 2018

Epitaxial GaAs for X-ray imaging

Sun, G. C.
Rao, R.
Makham, S.
Bourgoin, J. C.
Zhang, X. Y.
Gohier, R.
Masiello, F.
Haertwig, J.
Baruchel, J.
Ponchut, C.
Balocchi, Andrea
Marie, Xavier
Gilard, O.
Roch-Jeune, Isabelle
Pesant, J. C.

January 2011

11th International Workshop on Radiation Imaging Detectors, Czech Technical Univ, Inst Experimental ...

Point defects in compound semiconductor surfaces

Ebert, P.
Forschungszentrum Juelich GmbH (KFA) (Germany). Inst. fuer Festkoerperforschung
Technische Hochschule Aachen (Germany)

January 2001

The present work reviews atomic-scale properties of point defects and dopant atoms exposed in and be...

On the Quenched-In Defects in n-Type Silicon

Balasubramanyam, N
Kumar, V

January 1987

Electrical properties of deep levels introduced during quenching from high temperatures in VPE layer...

Radiation Defects Created in n‐Type 4H‐SiC by Electron Irradiation in the Energy Range of 1-10 MeV

Hazdra P.
Vobecký J.

January 2019

Radiation damage produced in 4H–SiC n–epilayers by electrons of different energies is presented. Jun...

Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC

Brodar T.
Capan I.
Radulovic V.
Snoj L.
Pastuovic Z.
Coutinho J.
Ohshima Takeshi

October 2018

This paper studies the electrically active deep level defects introduced in epitaxial n-type 4H-SiC ...

Electrically active point defects in n-type 4H¿SiC

Abstract

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Electrically active point defects in n-type 4H¿SiC

Abstract

Extracted data

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