In this paper, we first evaluate whether or not a multiple transient fault (multiple TF) generated by the hit of a single cosmic ray neutron can give rise to a bidirectional error at the circuit output (that is an error in which all erroneous bits are 1s rather than 0s, or vice versa, within the same word, but not both). By means of electrical level simulations, we show that this can be the case. Then, we present a software tool that we have developed in order to evaluate the likelihood of occurrence of such bidirectional errors for very deep submicron (VDSM) ICs. The application of this tool to benchmark circuits has proven that such a probability can not be neglected for several benchmark circuits. Finally, we evaluate the behavior of con...
International audienceThis paper presents a methodology for analyzing the behavior of nanometer tech...
ISBN: 0769506135IC technologies are approaching the ultimate limits of silicon in terms of device si...
Microelectronic devices and systems have been extensively utilized in a variety of radiation environ...
In this paper, we first evaluate whether or not a multiple Transient Fault (multiple TF) generated b...
This thesis discusses the types of transient faults caused by heavy-ion or a-particle radiation that...
Abstract: Transient (soft) faults due to particle strikes and other environmental and manufacturing ...
ISBN 2-913329-54-3Integrated circuit technology is approaching the ultimate limits of silicon in ter...
Single Event Transient (SET) errors in ground-level electronic devices are a growing concern in the ...
It is well known that high-energy particle strikes on an integrated circuit can cause circuit errors...
We propose a new method for SAT-based Boolean reasoning on multiple defects in digital ICs. Although...
Due to technology scaling, the probability of a high energy radiation particle striking multiple tra...
Recent deep-submicron-technology-based integrated circuits (ICs) are substantially more susceptible ...
The interaction of radiation with integrated circuits can provoke transient faults due to the deposi...
International audienceOver the last few years, many architectures of body or bulk built-in current s...
With the advent of VLSI technology, the systems fabricated in deep sub micron technology are more pr...
International audienceThis paper presents a methodology for analyzing the behavior of nanometer tech...
ISBN: 0769506135IC technologies are approaching the ultimate limits of silicon in terms of device si...
Microelectronic devices and systems have been extensively utilized in a variety of radiation environ...
In this paper, we first evaluate whether or not a multiple Transient Fault (multiple TF) generated b...
This thesis discusses the types of transient faults caused by heavy-ion or a-particle radiation that...
Abstract: Transient (soft) faults due to particle strikes and other environmental and manufacturing ...
ISBN 2-913329-54-3Integrated circuit technology is approaching the ultimate limits of silicon in ter...
Single Event Transient (SET) errors in ground-level electronic devices are a growing concern in the ...
It is well known that high-energy particle strikes on an integrated circuit can cause circuit errors...
We propose a new method for SAT-based Boolean reasoning on multiple defects in digital ICs. Although...
Due to technology scaling, the probability of a high energy radiation particle striking multiple tra...
Recent deep-submicron-technology-based integrated circuits (ICs) are substantially more susceptible ...
The interaction of radiation with integrated circuits can provoke transient faults due to the deposi...
International audienceOver the last few years, many architectures of body or bulk built-in current s...
With the advent of VLSI technology, the systems fabricated in deep sub micron technology are more pr...
International audienceThis paper presents a methodology for analyzing the behavior of nanometer tech...
ISBN: 0769506135IC technologies are approaching the ultimate limits of silicon in terms of device si...
Microelectronic devices and systems have been extensively utilized in a variety of radiation environ...