Add to ORKGСекция 2. Радиационные эффекты в твердом теле = Section 2. Radiation Effects in SolidsCombined electrical (Hall effect) and optical (infrared absorption) studies of similar silicon crystals irradiated with fast electrons have been carried out. On the base of analysis of the data obtained the calibration factors for the determination of concentrations of radiation-induced oxygen-vacancy complexes in silicon crystals by infrared absorption are deduced. The calibration coefficient for the determination of the oxygen dimer concentration is estimated as well
Infrared absorption studies of defect formation in Czochralski silicon irradiated with fast electron...
Oxygen doped Ge has been irradiated with 2-MeV electrons and isochronally annealed between 80 and 44...
The vacancy-dioxygen complex (VO2) is one of the main defects formed in irradiated Cz-Si crystals up...
On the base of analysis of the data obtained the calibration factors for the determination of concen...
The evolution of carbon-oxygen-related defects upon isochronal annealing (75-325 degrees C in 25 deg...
Carbon-oxygen-related complexes in Si crystals enriched with either oxygen (O-16,O-18) or carbon (C-...
Hall-effect measurements at temperatures 78+300 K have been performed in Czochralski-grown crystals ...
Local vibrational mode (LVM) spectroscopy has been used to study the evolution of vacancy-oxygen-rel...
Infrared absorption spectra of impurities and radiation damage in silicon semiconductor
A modelling study of several oxygen related defects in silicon and germanium crystals is reported. T...
We demonstrate that excitation of Er3+ ions embedded in crystalline silicon is effectively quenched ...
Silicon irradiated with fast neutrons exhibits a variety of infrared absorption, photoconductivity [...
Local vibrational mode (LVM) spectroscopy has been used to investigate the evolution of complexes re...
Crystalline silicon (Si) is the key material of the semiconductor industry, with significant applica...
We demonstrate that excitation of Er3+ ions embedded in crystalline silicon is effectively quenched ...
Infrared absorption studies of defect formation in Czochralski silicon irradiated with fast electron...
Oxygen doped Ge has been irradiated with 2-MeV electrons and isochronally annealed between 80 and 44...
The vacancy-dioxygen complex (VO2) is one of the main defects formed in irradiated Cz-Si crystals up...
On the base of analysis of the data obtained the calibration factors for the determination of concen...
The evolution of carbon-oxygen-related defects upon isochronal annealing (75-325 degrees C in 25 deg...
Carbon-oxygen-related complexes in Si crystals enriched with either oxygen (O-16,O-18) or carbon (C-...
Hall-effect measurements at temperatures 78+300 K have been performed in Czochralski-grown crystals ...
Local vibrational mode (LVM) spectroscopy has been used to study the evolution of vacancy-oxygen-rel...
Infrared absorption spectra of impurities and radiation damage in silicon semiconductor
A modelling study of several oxygen related defects in silicon and germanium crystals is reported. T...
We demonstrate that excitation of Er3+ ions embedded in crystalline silicon is effectively quenched ...
Silicon irradiated with fast neutrons exhibits a variety of infrared absorption, photoconductivity [...
Local vibrational mode (LVM) spectroscopy has been used to investigate the evolution of complexes re...
Crystalline silicon (Si) is the key material of the semiconductor industry, with significant applica...
We demonstrate that excitation of Er3+ ions embedded in crystalline silicon is effectively quenched ...
Infrared absorption studies of defect formation in Czochralski silicon irradiated with fast electron...
Oxygen doped Ge has been irradiated with 2-MeV electrons and isochronally annealed between 80 and 44...
The vacancy-dioxygen complex (VO2) is one of the main defects formed in irradiated Cz-Si crystals up...