Add to ORKGThe application of the finite element method for simulation the effect of electric field on shallow donor states near the surface of the semiconductor is considered. The influence of geometrical parameters on the ionization potential of the donor is studied. Peculiarities of donor states for different gate configurations are investigate
Generation of electron-hole pairs in group IV semiconductors under irradiation by electron beam is d...
The electroconductivity and tensosensibilily Cr and Ni films with thin overlayer Ge has been researc...
Substrate ionization currents are measured, electron mean free path and energy are defined for MOSFE...
The application of the finite element method for simulation the effect of electric field on shallow ...
In this paper Monte Carlo simulation of electron transport in MOSFET with 0,15 m channel length is ...
The expressions for Debye - HUckel and Schottky - Mott screening length of external electrostatic fi...
In this paper Monte Carlo calculations of electron mobility in MOSFETs with 0.5, 0.25 and 0.1 m cha...
The possibility of using the finite element method for simulation of electrostatic discharge during ...
The numerical model of the electron transport in submicron MOSFET was developed. The influence of im...
Substrate ionization currents are measured and electron mean free path and energy are defined for do...
A model of low frequency current oscillations in semi-insulating crystalline semiconductors with dee...
Work purpose: to carry out modeling of influence of the electrostatic category on semiconductor devi...
The problem questions of the ion beam masking in microelectronics are considered. It shown, that the...
In this paper induced by drain voltage effects on electric potential in inversion layer of short cha...
In article strength-stress state of the boundary wall of the chamber of outlet electronic and proton...
Generation of electron-hole pairs in group IV semiconductors under irradiation by electron beam is d...
The electroconductivity and tensosensibilily Cr and Ni films with thin overlayer Ge has been researc...
Substrate ionization currents are measured, electron mean free path and energy are defined for MOSFE...
The application of the finite element method for simulation the effect of electric field on shallow ...
In this paper Monte Carlo simulation of electron transport in MOSFET with 0,15 m channel length is ...
The expressions for Debye - HUckel and Schottky - Mott screening length of external electrostatic fi...
In this paper Monte Carlo calculations of electron mobility in MOSFETs with 0.5, 0.25 and 0.1 m cha...
The possibility of using the finite element method for simulation of electrostatic discharge during ...
The numerical model of the electron transport in submicron MOSFET was developed. The influence of im...
Substrate ionization currents are measured and electron mean free path and energy are defined for do...
A model of low frequency current oscillations in semi-insulating crystalline semiconductors with dee...
Work purpose: to carry out modeling of influence of the electrostatic category on semiconductor devi...
The problem questions of the ion beam masking in microelectronics are considered. It shown, that the...
In this paper induced by drain voltage effects on electric potential in inversion layer of short cha...
In article strength-stress state of the boundary wall of the chamber of outlet electronic and proton...
Generation of electron-hole pairs in group IV semiconductors under irradiation by electron beam is d...
The electroconductivity and tensosensibilily Cr and Ni films with thin overlayer Ge has been researc...
Substrate ionization currents are measured, electron mean free path and energy are defined for MOSFE...