Add to ORKGInAs quantum dots (QDs) imbedded in a GaAs matrix grown by molecular beam epitaxy (MBE) on Ge (100) substrates have been investigated using transmission electron microscopy, photoluminescence spectroscopy, capacitance voltage spectroscopy and deep level transient spectroscopy. In comparison to a reference sample grown on GaAs (100) substrate with the same growth parameters, we observe similar QD densities, but smaller QDs with a broader size distribution on Ge substrate. This is attributed to a strained GaAs matrix in these samples
We present a comparative study of InAs quantum dots grown on Si-doped GaAs (1 0 0) substrates, Si-do...
InAs quantum dots (QDs) were prepared by molecular beam epitaxy on GaAs(-1-1-2)B substrates. Shape a...
This work aims to investigate the structural, electrical, and optical properties of InAs quantum dot...
InAs quantum dots (QDs) imbedded in a GaAs matrix grown by molecular beam epitaxy (MBE) on Ge (100)...
Structural and optical investigations of InAs QDs grown on GaAs (3 1 1)A by molecular beam epitaxy (...
The effect of the InAs deposition rate on the properties of InAs/GaAs quantum dots (QD’s) grown on G...
Growth mode of tensile-strained Ge quantum dots on different III-V buffers by molecular beam epitaxy...
The influence of the conditions during growth of InAs/GaAs quantum-dot structures on GaAs(001) by mo...
The effect of the InAs deposition rate on the properties of InAs/GaAs quantum dots (QDs) grown on Ga...
InAs quantum dots (QDs) were grown by MBE on different InGaAs or GaAs surface layers to study the ef...
The effects of various InGaAs layers on the structural and optical properties of InAs self-assembled...
By a combination of prepatterned substrate and self-organized growth, InAs islands are grown on the ...
International audienceThe optical and structural properties of heterostructures with quantum dots (Q...
III- V semiconductor materials are the foundation of many modern electronic and optical devices. In ...
Self-assembled InAs quantum dots (QDs) have been grown by solid-source molecular beam epitaxy on a (...
We present a comparative study of InAs quantum dots grown on Si-doped GaAs (1 0 0) substrates, Si-do...
InAs quantum dots (QDs) were prepared by molecular beam epitaxy on GaAs(-1-1-2)B substrates. Shape a...
This work aims to investigate the structural, electrical, and optical properties of InAs quantum dot...
InAs quantum dots (QDs) imbedded in a GaAs matrix grown by molecular beam epitaxy (MBE) on Ge (100)...
Structural and optical investigations of InAs QDs grown on GaAs (3 1 1)A by molecular beam epitaxy (...
The effect of the InAs deposition rate on the properties of InAs/GaAs quantum dots (QD’s) grown on G...
Growth mode of tensile-strained Ge quantum dots on different III-V buffers by molecular beam epitaxy...
The influence of the conditions during growth of InAs/GaAs quantum-dot structures on GaAs(001) by mo...
The effect of the InAs deposition rate on the properties of InAs/GaAs quantum dots (QDs) grown on Ga...
InAs quantum dots (QDs) were grown by MBE on different InGaAs or GaAs surface layers to study the ef...
The effects of various InGaAs layers on the structural and optical properties of InAs self-assembled...
By a combination of prepatterned substrate and self-organized growth, InAs islands are grown on the ...
International audienceThe optical and structural properties of heterostructures with quantum dots (Q...
III- V semiconductor materials are the foundation of many modern electronic and optical devices. In ...
Self-assembled InAs quantum dots (QDs) have been grown by solid-source molecular beam epitaxy on a (...
We present a comparative study of InAs quantum dots grown on Si-doped GaAs (1 0 0) substrates, Si-do...
InAs quantum dots (QDs) were prepared by molecular beam epitaxy on GaAs(-1-1-2)B substrates. Shape a...
This work aims to investigate the structural, electrical, and optical properties of InAs quantum dot...