Add to ORKGThe expressions for Debye - HUckel and Schottky - Mott screening length of external electrostatic field in the crystal semiconductor with hopping migrations of electrons (holes) over hydrogen-like donors (acceptors) is obtained. The existence of a “hidden” conducting layer in the hopping conductivity regime for semiconductors with small and high compensation degrees is predicted
On the basis of the "thermal spike" model consideration was given to effects of high-energy ion impl...
In this paper induced by drain voltage effects on electric potential in inversion layer of short cha...
Experimental results of investigation of the strain sensitivity coefficient of the one- and three la...
A model of low frequency current oscillations in semi-insulating crystalline semiconductors with dee...
The influence of particularities of interimpurity recombination on the kinetics of the hopping photo...
The application of the finite element method for simulation the effect of electric field on shallow ...
In this paper Monte Carlo simulation of electron transport in MOSFET with 0,15 m channel length is ...
Hydrogen donors formation processes are studied in epitaxial silicon implanted with 300 keV protons....
An approach to calculation of the electron waves coherence length in quantum well of the double barr...
A goal of observing the extended defects mobility in niobium under its electrochemical loading by hy...
Temperature and size effects in thin films Co, Ni, Cr, Cu and Crfilms with Ge overlayer were investi...
In this paper Monte Carlo calculations of electron mobility in MOSFETs with 0.5, 0.25 and 0.1 m cha...
It is shown that the observed potential difference between the resistor and the screen surrounding t...
Substrate ionization currents are measured and electron mean free path and energy are defined for do...
The electroconductivity and tensosensibilily Cr and Ni films with thin overlayer Ge has been researc...
On the basis of the "thermal spike" model consideration was given to effects of high-energy ion impl...
In this paper induced by drain voltage effects on electric potential in inversion layer of short cha...
Experimental results of investigation of the strain sensitivity coefficient of the one- and three la...
A model of low frequency current oscillations in semi-insulating crystalline semiconductors with dee...
The influence of particularities of interimpurity recombination on the kinetics of the hopping photo...
The application of the finite element method for simulation the effect of electric field on shallow ...
In this paper Monte Carlo simulation of electron transport in MOSFET with 0,15 m channel length is ...
Hydrogen donors formation processes are studied in epitaxial silicon implanted with 300 keV protons....
An approach to calculation of the electron waves coherence length in quantum well of the double barr...
A goal of observing the extended defects mobility in niobium under its electrochemical loading by hy...
Temperature and size effects in thin films Co, Ni, Cr, Cu and Crfilms with Ge overlayer were investi...
In this paper Monte Carlo calculations of electron mobility in MOSFETs with 0.5, 0.25 and 0.1 m cha...
It is shown that the observed potential difference between the resistor and the screen surrounding t...
Substrate ionization currents are measured and electron mean free path and energy are defined for do...
The electroconductivity and tensosensibilily Cr and Ni films with thin overlayer Ge has been researc...
On the basis of the "thermal spike" model consideration was given to effects of high-energy ion impl...
In this paper induced by drain voltage effects on electric potential in inversion layer of short cha...
Experimental results of investigation of the strain sensitivity coefficient of the one- and three la...