Add to ORKGA model of low frequency current oscillations in semi-insulating crystalline semiconductors with deep levels has been developed. A combination of the approaches of field-enhanced trapping, field-enhanced emission and negative differential mobility of carriers was used. A linear analysis of the model was done. The dispersion relations of the model were found to describe the experimentally observed dependences of the activation energies and of the fundamental frequency on the electric field and the temperature
In this paper Monte Carlo simulation of electron transport in MOSFET with 0,15 m channel length is ...
The methods and results of numerical and experimental simulation of wavelike processes at stimulatio...
Electrophysical characteristics of graphite were investigated at temperature from 1273 to 3273K. Dep...
A model of low frequency current oscillations in semi-insulating crystalline semiconductors with dee...
The expressions for Debye - HUckel and Schottky - Mott screening length of external electrostatic fi...
The numerical model of the electron transport in submicron MOSFET was developed. The influence of im...
In this paper induced by drain voltage effects on electric potential in inversion layer of short cha...
The low temperature (down- to ~1,6K) electric conductivity of germanium “doped” by radiation defects...
In this paper Monte Carlo calculations of electron mobility in MOSFETs with 0.5, 0.25 and 0.1 m cha...
In this paper, the influence of electromagnetic emission response of the sample was research using t...
The possibility of creation of silicon lasers based on the specific few-atomic structural imperfecti...
We report the results of calculations of acoustical signal from the overheated region near the track...
Work purpose: to carry out modeling of influence of the electrostatic category on semiconductor devi...
A connection between a state of high electron conductivity with low dimension of conducting subsyst...
It is shown that the observed potential difference between the resistor and the screen surrounding t...
In this paper Monte Carlo simulation of electron transport in MOSFET with 0,15 m channel length is ...
The methods and results of numerical and experimental simulation of wavelike processes at stimulatio...
Electrophysical characteristics of graphite were investigated at temperature from 1273 to 3273K. Dep...
A model of low frequency current oscillations in semi-insulating crystalline semiconductors with dee...
The expressions for Debye - HUckel and Schottky - Mott screening length of external electrostatic fi...
The numerical model of the electron transport in submicron MOSFET was developed. The influence of im...
In this paper induced by drain voltage effects on electric potential in inversion layer of short cha...
The low temperature (down- to ~1,6K) electric conductivity of germanium “doped” by radiation defects...
In this paper Monte Carlo calculations of electron mobility in MOSFETs with 0.5, 0.25 and 0.1 m cha...
In this paper, the influence of electromagnetic emission response of the sample was research using t...
The possibility of creation of silicon lasers based on the specific few-atomic structural imperfecti...
We report the results of calculations of acoustical signal from the overheated region near the track...
Work purpose: to carry out modeling of influence of the electrostatic category on semiconductor devi...
A connection between a state of high electron conductivity with low dimension of conducting subsyst...
It is shown that the observed potential difference between the resistor and the screen surrounding t...
In this paper Monte Carlo simulation of electron transport in MOSFET with 0,15 m channel length is ...
The methods and results of numerical and experimental simulation of wavelike processes at stimulatio...
Electrophysical characteristics of graphite were investigated at temperature from 1273 to 3273K. Dep...