Add to ORKGIn this article the changes in the surface resistance of silicide lays during the different temperatures are investigated. It is shown that the surface resistance is decreased when the temperature is raised. When the temperature is 720 0C the value of surface resistance is minimum (1,75 O m / d)
Utillizing experimental dependences of a thermal resistance coefficient on thichnes for films Ni, Cu...
Electrophysical characteristics of graphite were investigated at temperature from 1273 to 3273K. Dep...
The new technology of depositing a wearproof coverings is offered, using thermal energy allocated at...
Temperature dependance of resistance and temperature coefficient of resistance of three layer films ...
Temperature and size effects in thin films Co, Ni, Cr, Cu and Crfilms with Ge overlayer were investi...
In this paper we investigate the surface topography of coatings based on oxides and dioxins-titanium...
The size dependence of temperature coefficient of resistance (TCR) in double-layer Ti/Ni/S, Ni/Ti/S,...
The paper discussed the effect of tungsten inclusion into deposited from hypophosphite solutions Ni-...
In this article we consider electrophysical and mechanical properties of TiSi2, which is produced by...
The electroconductivity and tensosensibilily Cr and Ni films with thin overlayer Ge has been researc...
Experimental results of investigation of the strain sensitivity coefficient of the one- and three la...
In this report the influence of concentration and temperature of KOH solutions on etching rate of Si...
The experimental results of gas sensitivity of ultra dispersed metal oxides with semiconductor pro...
The study of the influence of the activation on the surface morphology of obtained nickel-phosphorus...
Surface treatment carried silumin concentrated streams of energy. This study revealed the mode of ac...
Utillizing experimental dependences of a thermal resistance coefficient on thichnes for films Ni, Cu...
Electrophysical characteristics of graphite were investigated at temperature from 1273 to 3273K. Dep...
The new technology of depositing a wearproof coverings is offered, using thermal energy allocated at...
Temperature dependance of resistance and temperature coefficient of resistance of three layer films ...
Temperature and size effects in thin films Co, Ni, Cr, Cu and Crfilms with Ge overlayer were investi...
In this paper we investigate the surface topography of coatings based on oxides and dioxins-titanium...
The size dependence of temperature coefficient of resistance (TCR) in double-layer Ti/Ni/S, Ni/Ti/S,...
The paper discussed the effect of tungsten inclusion into deposited from hypophosphite solutions Ni-...
In this article we consider electrophysical and mechanical properties of TiSi2, which is produced by...
The electroconductivity and tensosensibilily Cr and Ni films with thin overlayer Ge has been researc...
Experimental results of investigation of the strain sensitivity coefficient of the one- and three la...
In this report the influence of concentration and temperature of KOH solutions on etching rate of Si...
The experimental results of gas sensitivity of ultra dispersed metal oxides with semiconductor pro...
The study of the influence of the activation on the surface morphology of obtained nickel-phosphorus...
Surface treatment carried silumin concentrated streams of energy. This study revealed the mode of ac...
Utillizing experimental dependences of a thermal resistance coefficient on thichnes for films Ni, Cu...
Electrophysical characteristics of graphite were investigated at temperature from 1273 to 3273K. Dep...
The new technology of depositing a wearproof coverings is offered, using thermal energy allocated at...