New applications of ion bombardment in secondary ion mass spectrometry (SIMS) are reviewed. Recent development and application of cluster ion bombardment in SIMS method are discussed. Also discussed is recently developed, one of quantitative SIMS techniques – “storing matter” technique. Presented is new design quadrupole based SIMS spectrometer allowing to perform “storing matter” technique in one analytical chamber. Examples of depth profile analysis of Cr implanted inconel 600 alloy obtained with the use of ‘standard’ and ‘storing matter’ SIMS are presented
To fabricate efficient, cost-effective and faster devices, the semiconductor industry has been downs...
In Secondary Ion Mass Spectrometry (SIMS) a focused beam of energetic ions (so-called primary ions) ...
AbstractSecondary Ion Mass Spectrometry (SIMS) is probably the most powerful analytical technique fo...
New applications of ion bombardment in secondary ion mass spectrometry (SIMS) are reviewed. Recent d...
This paper reviews the current state of Secondary Ion Mass Spectrometry (SIMS) applied to the invest...
Podeu consultar el llibre complet a: http://hdl.handle.net/2445/32166This article outlines the basis...
In secondary ion mass spectrometry (SIMS), the beneficial effect of cesium implantation or flooding ...
Secondary Ion Mass Spectrometry (SIMS) extracts chemical, elemental, or isotopic information about a...
The principles and operating modes of secondary ion mass spectrometry (SIMS) are first described aft...
Currently employed quadrupole-based SIMS instrumentation is reviewed critically. The various problem...
Secondary Ion Mass Spectrometry (SIMS) extracts chemical, elemental, or isotopic information about a...
A review with 182 refs. is given on phys. phenomena such as sputtering, ion emission, ionization and...
Secondary Ion Mass Spectrometry (SIMS) is one of the most versatile, and in recent years among the m...
This work sets out a framework to provide a metrological basis for static SIMS measurements. This su...
Secondary-ion mass spectrometry (SIMS) is based on the acceleration of high-energy primary ions onto...
To fabricate efficient, cost-effective and faster devices, the semiconductor industry has been downs...
In Secondary Ion Mass Spectrometry (SIMS) a focused beam of energetic ions (so-called primary ions) ...
AbstractSecondary Ion Mass Spectrometry (SIMS) is probably the most powerful analytical technique fo...
New applications of ion bombardment in secondary ion mass spectrometry (SIMS) are reviewed. Recent d...
This paper reviews the current state of Secondary Ion Mass Spectrometry (SIMS) applied to the invest...
Podeu consultar el llibre complet a: http://hdl.handle.net/2445/32166This article outlines the basis...
In secondary ion mass spectrometry (SIMS), the beneficial effect of cesium implantation or flooding ...
Secondary Ion Mass Spectrometry (SIMS) extracts chemical, elemental, or isotopic information about a...
The principles and operating modes of secondary ion mass spectrometry (SIMS) are first described aft...
Currently employed quadrupole-based SIMS instrumentation is reviewed critically. The various problem...
Secondary Ion Mass Spectrometry (SIMS) extracts chemical, elemental, or isotopic information about a...
A review with 182 refs. is given on phys. phenomena such as sputtering, ion emission, ionization and...
Secondary Ion Mass Spectrometry (SIMS) is one of the most versatile, and in recent years among the m...
This work sets out a framework to provide a metrological basis for static SIMS measurements. This su...
Secondary-ion mass spectrometry (SIMS) is based on the acceleration of high-energy primary ions onto...
To fabricate efficient, cost-effective and faster devices, the semiconductor industry has been downs...
In Secondary Ion Mass Spectrometry (SIMS) a focused beam of energetic ions (so-called primary ions) ...
AbstractSecondary Ion Mass Spectrometry (SIMS) is probably the most powerful analytical technique fo...
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