Add to ORKGThe formation of nanodimensional InAs crystallites on Si wafers was studied by the method of high fluence implantation of As and In ions with subsequent high temperature treatment. It was found that the size and depth distributions of the crystallites depend on both the implantation temperature and the annealing conditions. A broad band in an energy range of 0.75–1.1 eV was recorded in the photolumines cence spectra of the samples
Light emission from porous silicon is known since several years. Recently, the ability of silicon na...
In recent years a great deal of interest has been focused on the synthesis of transitional metal (e....
The exploitation of Si nanostructures for electronic and optoelectronic devices depends on their ele...
The formation of nanodimensional InAs crystallites on Si wafers was studied by the method of high fl...
Nanosized crystallites have been synthesized in the Si and SiO2/Si structures by means of As (170 ke...
We have studied the influence of ion implantation and post-implantation annealing regimes on the stru...
We reported the structure peculiarities of nanocrystals formed in Si by means of high-fluence implan...
We have studied the ion-beam synthesis of InAs and GaSb nanocrystals in Si by high-fluence implantat...
A physicomathematical model and dedicated software are developed for simulating high-dose implantati...
We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence “hot” implantation ...
Les boîtes quantiques sous formes de nanocristaux semi-conducteurs permettent de réaliser des matéri...
The implantation formation of InAs nanoclusters in silicon and silica and their modification via irr...
We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence implantation of Sb ...
Si nanocrystals in thermal oxide films (similar to 250 nm) were fabricated by 100 keV Si ion implant...
AbstractWe have investigated photoluminescence (PL) properties of β-FeSi2 nanocrystals in Si crystal...
Light emission from porous silicon is known since several years. Recently, the ability of silicon na...
In recent years a great deal of interest has been focused on the synthesis of transitional metal (e....
The exploitation of Si nanostructures for electronic and optoelectronic devices depends on their ele...
The formation of nanodimensional InAs crystallites on Si wafers was studied by the method of high fl...
Nanosized crystallites have been synthesized in the Si and SiO2/Si structures by means of As (170 ke...
We have studied the influence of ion implantation and post-implantation annealing regimes on the stru...
We reported the structure peculiarities of nanocrystals formed in Si by means of high-fluence implan...
We have studied the ion-beam synthesis of InAs and GaSb nanocrystals in Si by high-fluence implantat...
A physicomathematical model and dedicated software are developed for simulating high-dose implantati...
We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence “hot” implantation ...
Les boîtes quantiques sous formes de nanocristaux semi-conducteurs permettent de réaliser des matéri...
The implantation formation of InAs nanoclusters in silicon and silica and their modification via irr...
We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence implantation of Sb ...
Si nanocrystals in thermal oxide films (similar to 250 nm) were fabricated by 100 keV Si ion implant...
AbstractWe have investigated photoluminescence (PL) properties of β-FeSi2 nanocrystals in Si crystal...
Light emission from porous silicon is known since several years. Recently, the ability of silicon na...
In recent years a great deal of interest has been focused on the synthesis of transitional metal (e....
The exploitation of Si nanostructures for electronic and optoelectronic devices depends on their ele...