Add to ORKGTaking into account the density state tails appearing due to fluctuations of impurity concentrations, the spontaneous emission spectra of doped semiconductor superlattices are calculated. In the framework of the model developed, the explanation of the experimentally observed longwave edge and the shift of the photoluminescence spectra with increase in the excitation level and temperature is given. The role of the defects formed on α-irradiation is discussed, and the lifetime of current carriers is evaluated depending on the design parameters and excitation conditions of the GaAs doped superlattices
The temperature and excitation intensity dependencies of the photoluminescence (PL) spectra of GaAs/...
The results of investigation of bulk GaAs photoluminescence are presented taken from near-surface la...
A theory of angle-resolved photoemission (ARPES) in doped semiconductors is developed, paying partic...
Taking into account the density state tails appearing due to fluctuations of impurity concentrations...
It is shown, that the lifetime of nonequilibrium current carriers in the luminescence process in dop...
Based on the developed method of self-consistent calculations the results of description of tunable ...
The GaAs short-period superlattices have been grown for the first time by the metal-organic hydride ...
Optical and electric properties of doping superlattices, or n-i-p-i crystals, can be varied in a wid...
For doped semiconductor superlattices we have analyzed the effects of absorption saturation and cha...
For doped semiconductor superlattices we have analyzed the effects of absorption saturation and cha...
The photoluminescence (PL) spectra of disordered superlattices (d-SL) are discussed. The experimenta...
We report on the change of character, from an isolated well to a superlattice, of multiple -doped st...
The variation of the energy spectrum of n-i-p-i crystals under excitation was examined and the infl...
The temperature and excitation intensity dependencies of the photoluminescence (PL) spectra of GaAs/...
Radiative transition in δ-doped GaAs superlattices with and without Al 0.1Ga 0.9As barriers is inves...
The temperature and excitation intensity dependencies of the photoluminescence (PL) spectra of GaAs/...
The results of investigation of bulk GaAs photoluminescence are presented taken from near-surface la...
A theory of angle-resolved photoemission (ARPES) in doped semiconductors is developed, paying partic...
Taking into account the density state tails appearing due to fluctuations of impurity concentrations...
It is shown, that the lifetime of nonequilibrium current carriers in the luminescence process in dop...
Based on the developed method of self-consistent calculations the results of description of tunable ...
The GaAs short-period superlattices have been grown for the first time by the metal-organic hydride ...
Optical and electric properties of doping superlattices, or n-i-p-i crystals, can be varied in a wid...
For doped semiconductor superlattices we have analyzed the effects of absorption saturation and cha...
For doped semiconductor superlattices we have analyzed the effects of absorption saturation and cha...
The photoluminescence (PL) spectra of disordered superlattices (d-SL) are discussed. The experimenta...
We report on the change of character, from an isolated well to a superlattice, of multiple -doped st...
The variation of the energy spectrum of n-i-p-i crystals under excitation was examined and the infl...
The temperature and excitation intensity dependencies of the photoluminescence (PL) spectra of GaAs/...
Radiative transition in δ-doped GaAs superlattices with and without Al 0.1Ga 0.9As barriers is inves...
The temperature and excitation intensity dependencies of the photoluminescence (PL) spectra of GaAs/...
The results of investigation of bulk GaAs photoluminescence are presented taken from near-surface la...
A theory of angle-resolved photoemission (ARPES) in doped semiconductors is developed, paying partic...