The phonon dispersion relations of bulk hexagonal boron nitride have been determined from inelastic x-ray scattering measurements and analyzed by ab initio calculations. Experimental data and calculations show an outstanding agreement and reconcile the controversies raised by recent experimental data obtained by electron-energy loss spectroscopy and second-order Raman scattering
Hexagonal boron nitride (hBN) is a wide band gap material with both strong excitonic light emission ...
Using synchrotron-based luminescence excitation spectroscopy in the energy range 4–20 eV at 8 K, the...
International audienceThis work examines the importance of vibrational delocalization on a basic the...
peer reviewedThe phonon dispersion relations of bulk hexagonal boron nitride have been determined fr...
Hexagonal boron nitride (h-BN) exhibits a wide indirect bandgap of 5.955 eV, as recently demonstrate...
Vibrations in materials and nanostructures at sufficiently high temperatures result in anharmonic at...
We measured first- and second-order Raman scattering in cubic and hexagonal boron nitride using exci...
peer reviewedThe anisotropy of the valence energy-loss function of hexagonal boron nitride (hBN) is ...
We address the intrinsic optical properties of hexagonal boron nitride in deep ultraviolet. We show ...
We present an extensive first-principles study of the phonons in boron nitride nanotubes using densi...
The exceptional properties of Boron Nitrides (BN) nanotube have attracted the attention of the resea...
International audienceI will discuss here our results on phonon-assisted recombination in hBN, from ...
École thématiqueI will discuss here our results on phonon-assisted recombination in hBN, from bulk c...
The recent availability of isotopically pure samples of hexagonal boron nitride (h-BN) has allowed t...
The phonon linewidth of isotopically controlled hexagonal boron nitride (h-BN) single crystals has b...
Hexagonal boron nitride (hBN) is a wide band gap material with both strong excitonic light emission ...
Using synchrotron-based luminescence excitation spectroscopy in the energy range 4–20 eV at 8 K, the...
International audienceThis work examines the importance of vibrational delocalization on a basic the...
peer reviewedThe phonon dispersion relations of bulk hexagonal boron nitride have been determined fr...
Hexagonal boron nitride (h-BN) exhibits a wide indirect bandgap of 5.955 eV, as recently demonstrate...
Vibrations in materials and nanostructures at sufficiently high temperatures result in anharmonic at...
We measured first- and second-order Raman scattering in cubic and hexagonal boron nitride using exci...
peer reviewedThe anisotropy of the valence energy-loss function of hexagonal boron nitride (hBN) is ...
We address the intrinsic optical properties of hexagonal boron nitride in deep ultraviolet. We show ...
We present an extensive first-principles study of the phonons in boron nitride nanotubes using densi...
The exceptional properties of Boron Nitrides (BN) nanotube have attracted the attention of the resea...
International audienceI will discuss here our results on phonon-assisted recombination in hBN, from ...
École thématiqueI will discuss here our results on phonon-assisted recombination in hBN, from bulk c...
The recent availability of isotopically pure samples of hexagonal boron nitride (h-BN) has allowed t...
The phonon linewidth of isotopically controlled hexagonal boron nitride (h-BN) single crystals has b...
Hexagonal boron nitride (hBN) is a wide band gap material with both strong excitonic light emission ...
Using synchrotron-based luminescence excitation spectroscopy in the energy range 4–20 eV at 8 K, the...
International audienceThis work examines the importance of vibrational delocalization on a basic the...