Add to ORKGEnhancing the light extraction efficiency is an important problem in the manufacturing of GaN-based LEDs. Many methods have been carried out to increase the external efficiency, including roughening the surface of the LED. In this study, we proposed an approach of wet chemical etching in KOH and K2S2O8 mixed solutions for roughening the surface of GaN. An analysis on change the surface of GaN is described as a function of etching time
p-GaN surfaces are nano-roughened by plasma etching to improve the optical performance of GaN-based ...
[[abstract]]The electrodeless photoelectrochemical (PEC) wet etching of GaN, photoassisted with chop...
Etching of gallium nitride is a key step in the production of blue and white light-emitting diodes ...
Enhancing the light extraction efficiency is an important problem in the manufacturing of GaN-based ...
The InGaN-based light-emitting diodes (LEDs) with a roughened backside on the N-face surface of GaN ...
Abstract — In this letter, the numerical and experimental demonstrations for enhancement of light ex...
A new method of light-assisted wet etching of semiconductor nitride GaN has been successfully demons...
Etching of gallium nitride is a key step in the production of blue and white light-emitting diodes (...
A simple UV photo-enhanced wet etch has been developed for GaN. Unlike photoelectrochemical wet etch...
We report the chemical etching characteristics of Ga-face and N-face GaN using phosphoric acid (H3PO...
It is well-known that GaN-on-GaN LEDs have lower dislocation density compared to GaN-on-sapphire LED...
81 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1999.In this work, the technique of...
International audienceThe impact of several wet etchants commonly encountered in the microelectronic...
A recently developed photoetching system for n-type GaN, a KOH solution containing the strong oxidiz...
[[abstract]]Potassium hydroxide solution was used to etch un-doped GaN grown on the sapphire substra...
p-GaN surfaces are nano-roughened by plasma etching to improve the optical performance of GaN-based ...
[[abstract]]The electrodeless photoelectrochemical (PEC) wet etching of GaN, photoassisted with chop...
Etching of gallium nitride is a key step in the production of blue and white light-emitting diodes ...
Enhancing the light extraction efficiency is an important problem in the manufacturing of GaN-based ...
The InGaN-based light-emitting diodes (LEDs) with a roughened backside on the N-face surface of GaN ...
Abstract — In this letter, the numerical and experimental demonstrations for enhancement of light ex...
A new method of light-assisted wet etching of semiconductor nitride GaN has been successfully demons...
Etching of gallium nitride is a key step in the production of blue and white light-emitting diodes (...
A simple UV photo-enhanced wet etch has been developed for GaN. Unlike photoelectrochemical wet etch...
We report the chemical etching characteristics of Ga-face and N-face GaN using phosphoric acid (H3PO...
It is well-known that GaN-on-GaN LEDs have lower dislocation density compared to GaN-on-sapphire LED...
81 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1999.In this work, the technique of...
International audienceThe impact of several wet etchants commonly encountered in the microelectronic...
A recently developed photoetching system for n-type GaN, a KOH solution containing the strong oxidiz...
[[abstract]]Potassium hydroxide solution was used to etch un-doped GaN grown on the sapphire substra...
p-GaN surfaces are nano-roughened by plasma etching to improve the optical performance of GaN-based ...
[[abstract]]The electrodeless photoelectrochemical (PEC) wet etching of GaN, photoassisted with chop...
Etching of gallium nitride is a key step in the production of blue and white light-emitting diodes ...