Ferromagnetic HfO2/Si/GaAs interface for spin-polarimetry applications
- ereshchenko, Oleg E.
- Eremeev, Sergey V.
- Maurin, I.
- Bakulin, Alexander V.
- Kulkova, Svetlana E.
- Aksenov, Maxim S.
- Preobrazhenskii, V. V.
- Putyato, M. A.
- Semyagin, B. R.
- Golyashov, V. A.
- Dmitriev, D. V.
- Toropov, A. I.
- Gutakovskii, A. K.
- Khandarkhaeva, S. E.
- Prosvirin, I. P.
DOIAbstract
In this letter, we present electrical and magnetic characteristics of HfO2-based metal-oxide-semiconductor capacitors (MOSCAPs), along with the effect of pseudomorphic Si as a passivating interlayer on GaAs(001) grown by molecular beam epitaxy. Ultrathin HfO2 high-k gate dielectric films (3–15 nm) have been grown on Si/GaAs(001) structures through evaporation of a Hf/HfO2 target in NO2 gas. The lowest interface states density Dit at Au/HfO2/Si/GaAs(001) MOS-structures were obtained in the range of (6−13)×101
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