Effect of a boron implantation on the electrical properties of epitaxial HgCdTe with different material composition
- Lyapunov, D. V.
- Grigoryev, Denis V.
- Korotaev, A. G.
- Voytsekhovskiy, Alexander V.
- Kokhanenko, Andrey P.
- Iznin, I. I.
- Savytskyy, Hrygory V.
- Bonchik, A. U.
- Dvoretsky, Sergei A.
- Pishchagin, Anton A.
- Mikhailov, Nikolay N.
DOIAbstract
In this work the experimental results of investigations of the dynamics of accumulation and spatial distribution of electrically active radiation defects when irradiating epitaxial films of Hg1-xCdxTe (MCT) with different material composition (x). The films, grown by molecular beam epitaxy (MBE) were irradiated by B ions at room temperature in the radiation dose range 1012 -1015 ions/cm2 and with ion energy 100 keV. The results give the differences in implantation profiles, damage accumulation and electrical properties as a function of the material composition of the film
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