Effects of proton implantation and hydrogen plasma passivation on electrical properties of InGaAlP and InGaP
- Polyakov A.Y.
- Chelniy A.A.
- Govorkov A.V.
- Smirnov N.B.
- Milnes A.G.
- Pearton S.J.
- Wilson R.G.
- Balmashnov A.A.
- Aluev A.N.
- Markov A.V.
DOIAbstract
It is shown that both acceptors and donors can be passivated by hydrogen in InGaP and InGaAlP and that high-resistivity (about 103 Ω cm) layers of p-InGaAlP and of p-InGaP can be prepared by hydrogen plasma treatment at 250°C. Proton implantation with energy 100 keV is shown to create high-resistivity layers (104-105 Ω cm) both in n and in type InGaP and InGaAlP. © 1995
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