© 2019 Elsevier Ltd For the first time, Cu+-ion implantation into single-crystal c-Ge with an energy of E = 40 keV, doses (D) from 1.8·1015 to 1.5·1017 ion/cm2 and current density of J = 5 μA/cm2 was carried out. Using scanning electron microscopy the surface morphology of an implanted c-Ge was studied. The composition and structure of the samples were also analyzed by X-ray photoelectron spectroscopy (XPS). It was shown that after exceeding the threshold of D = 3.1·1015 ion/cm2, Cu nanoparticles uniformly distributed over the a-Ge surface are synthesized. For a sample implanted with D = 6.2·1016 ion/cm2, a Ge porous network is observed. Cu nanoparticles are located in the nodes of network. XPS study showed that Cu-germanate does not form
This thesis work is focused on the investigation of a peculiar phenomenon observed in germanium: the...
Synthesis and characterization of Ge based nanostructures are presented. Ion beam synthesis of pure ...
Crystalline Ge and Si1−xGex alloys (x = 0.83, 0.77) of (100) orientation were implanted with 140 keV...
© 2018 Elsevier Ltd A technical approach is proposed for the synthesis of thin porous PGe layers wit...
© 2020 Elsevier Ltd The surface morphology of nanoporous Ge (PGe) layers formed by low-energy high-d...
© 2018 Institute of Physics Publishing.All Rights Reserved. A novel approach is proposed and tested ...
© 2018, Pleiades Publishing, Ltd. We propose a method for the formation of porous germanium (P-Ge) l...
© 2019 Elsevier Ltd Surface processes for porous Ge (PGe) formed by low-energy high-dose implantatio...
The flat monocrystalline c-Ge wafers implanted by 108Ag + ions with the energy E = 30 keV, dose D = ...
© 2020, Pleiades Publishing, Ltd. Abstract: Results are presented of a study of the morphology of ge...
© 2019, Pleiades Publishing, Ltd. Abstract: Results of an investigation of the surface of germanium ...
Germanium nanocrystals embedded in SiO2 have been formed by ion implantation and subsequent thermal ...
The study addresses the monocrystalline c-Ge substrates implanted by Ag+ ions with the energy of 30 ...
© 2015 Advanced Study Center Co. Ltd. Porous materials have attracted remarkable concerns and found ...
High-resolution SEM images of germanium nanocrystals (Ge-nc) synthesized by ion implantation in fuse...
This thesis work is focused on the investigation of a peculiar phenomenon observed in germanium: the...
Synthesis and characterization of Ge based nanostructures are presented. Ion beam synthesis of pure ...
Crystalline Ge and Si1−xGex alloys (x = 0.83, 0.77) of (100) orientation were implanted with 140 keV...
© 2018 Elsevier Ltd A technical approach is proposed for the synthesis of thin porous PGe layers wit...
© 2020 Elsevier Ltd The surface morphology of nanoporous Ge (PGe) layers formed by low-energy high-d...
© 2018 Institute of Physics Publishing.All Rights Reserved. A novel approach is proposed and tested ...
© 2018, Pleiades Publishing, Ltd. We propose a method for the formation of porous germanium (P-Ge) l...
© 2019 Elsevier Ltd Surface processes for porous Ge (PGe) formed by low-energy high-dose implantatio...
The flat monocrystalline c-Ge wafers implanted by 108Ag + ions with the energy E = 30 keV, dose D = ...
© 2020, Pleiades Publishing, Ltd. Abstract: Results are presented of a study of the morphology of ge...
© 2019, Pleiades Publishing, Ltd. Abstract: Results of an investigation of the surface of germanium ...
Germanium nanocrystals embedded in SiO2 have been formed by ion implantation and subsequent thermal ...
The study addresses the monocrystalline c-Ge substrates implanted by Ag+ ions with the energy of 30 ...
© 2015 Advanced Study Center Co. Ltd. Porous materials have attracted remarkable concerns and found ...
High-resolution SEM images of germanium nanocrystals (Ge-nc) synthesized by ion implantation in fuse...
This thesis work is focused on the investigation of a peculiar phenomenon observed in germanium: the...
Synthesis and characterization of Ge based nanostructures are presented. Ion beam synthesis of pure ...
Crystalline Ge and Si1−xGex alloys (x = 0.83, 0.77) of (100) orientation were implanted with 140 keV...