We examine a 31P donor electron spin in a Si crystal to be used for the purpose of quantum computation. The interaction with an uncontrolled system of 29Si nuclear spins influences the electron-spin dynamics appreciably. The hyperfine field at the 29Si nuclei positions is noncollinear with the external magnetic field. Quantum operations with the electron wave function, i.e., using magnetic-field pulses or electrical gates, change the orientation of hyperfine field and disturb the nuclear-spin system. This disturbance produces a deviation of the electron spin qubit from an ideal state, at a short-time scale in comparison with the nuclear-spin diffusion time. For Hext≈9 T the estimated error rate is comparable to the threshold value required ...
The spins of phosphorus doped in silicon are potential candidates for a quantum computing device, w...
The environment interacts with the electron and leads to electron relaxation pro cesses. To measure ...
There is a growing interest in bismuth-doped silicon (Si:Bi) as an alternative to the well-studied p...
We examine a 31P donor electron spin in a Si crystal to be used for the purpose of quantum computati...
Donors in silicon, which combine an electron and nuclear spin, are some of the most promising candid...
We study the low-temperature dynamics of a shallow donor, e.g., 31P, impurity electron spin in silic...
We investigate spin coherence time of electrons bound to phosphorus donors in silicon sin-gle crysta...
Spin is a quantum mechanical property that describes the magnetic orientation of elementary and comp...
The quantum coherence and gate fidelity of electron spin qubits in semiconductors are often limited ...
We numerically simulate the process of nuclear spin measurement in Kane's quantum computer. For this...
© 2015 American Physical Society. We demonstrate an efficient control of Si29 nuclear spins for spec...
Spin properties of donor impurities in silicon have been investigated by electron spin resonance (ES...
The transfer of information between different physical forms is a central theme in communication and...
The transfer of information between different physical forms - for example processing entities and m...
Abstract. We propose a novel optical and electrical hybrid scheme for the measurement of nuclear spi...
The spins of phosphorus doped in silicon are potential candidates for a quantum computing device, w...
The environment interacts with the electron and leads to electron relaxation pro cesses. To measure ...
There is a growing interest in bismuth-doped silicon (Si:Bi) as an alternative to the well-studied p...
We examine a 31P donor electron spin in a Si crystal to be used for the purpose of quantum computati...
Donors in silicon, which combine an electron and nuclear spin, are some of the most promising candid...
We study the low-temperature dynamics of a shallow donor, e.g., 31P, impurity electron spin in silic...
We investigate spin coherence time of electrons bound to phosphorus donors in silicon sin-gle crysta...
Spin is a quantum mechanical property that describes the magnetic orientation of elementary and comp...
The quantum coherence and gate fidelity of electron spin qubits in semiconductors are often limited ...
We numerically simulate the process of nuclear spin measurement in Kane's quantum computer. For this...
© 2015 American Physical Society. We demonstrate an efficient control of Si29 nuclear spins for spec...
Spin properties of donor impurities in silicon have been investigated by electron spin resonance (ES...
The transfer of information between different physical forms is a central theme in communication and...
The transfer of information between different physical forms - for example processing entities and m...
Abstract. We propose a novel optical and electrical hybrid scheme for the measurement of nuclear spi...
The spins of phosphorus doped in silicon are potential candidates for a quantum computing device, w...
The environment interacts with the electron and leads to electron relaxation pro cesses. To measure ...
There is a growing interest in bismuth-doped silicon (Si:Bi) as an alternative to the well-studied p...