Ab initio total-energy calculations were used to examine (2×2) reconstruction models for the (111) and (1¯1¯1¯) surfaces of GaAs. For the (111) surface the lowest-energy Ga-vacancy geometry is determined; several mechanisms for Ga-vacancy formation are examined and other reconstructions are discussed. For the (1¯1¯1¯) surface it is shown that the As-vacancy model is unlikely and other geometries are considered.Engineering and Applied Science
GaAs samples with orientations vicinal to (2 5 11) within 1degree were prepared by molecular beam ep...
We present a brief overview of surface structures of high-index GaAs surfaces, putting emphasis on r...
The GaAs((113) over bar)B surfaces were prepared by molecular-beam epitaxy and were in situ studied ...
The atomic structures and energies of Ga-rich GaAs(0 0 1) surface reconstructions are examined by me...
The role of chemical potentials in surface reconstructions is examined and shown to be crucial for b...
The GaAs(112)A and B surfaces were prepared by molecular beam epitaxy (MBE) and characterized in sit...
Total energy calculations have been performed for the Ga-rich GaAs(001)-(4×2) surface using first-pr...
We investigated GaAs (1 1 3) surfaces prepared by molecular beam epitaxy (MBE) and metal-organic vap...
GaAs(114)A surfaces were prepared using molecular beam epitaxy followed by annealing in As-2 pressur...
The GaAs(112)A and (1̄1̄2̄)B surfaces have been prepared by molecular-beam epitaxy (MBE) and analyze...
Using ab initio methods (generalized valence bond with small clusters to represent the surface), we ...
\u3cp\u3eA new model is presented for the description of the surface reconstruction of III-V semicon...
A new model is presented for the description of the surface reconstruction of III-V semiconductors. ...
While the As-rich 2 x 4 reconstruction of GaAs(001) is well explained by the so-called beta(2) struc...
We have studied the reconstruction of the (110) surface of various III–V semiconductor compounds (Ga...
GaAs samples with orientations vicinal to (2 5 11) within 1degree were prepared by molecular beam ep...
We present a brief overview of surface structures of high-index GaAs surfaces, putting emphasis on r...
The GaAs((113) over bar)B surfaces were prepared by molecular-beam epitaxy and were in situ studied ...
The atomic structures and energies of Ga-rich GaAs(0 0 1) surface reconstructions are examined by me...
The role of chemical potentials in surface reconstructions is examined and shown to be crucial for b...
The GaAs(112)A and B surfaces were prepared by molecular beam epitaxy (MBE) and characterized in sit...
Total energy calculations have been performed for the Ga-rich GaAs(001)-(4×2) surface using first-pr...
We investigated GaAs (1 1 3) surfaces prepared by molecular beam epitaxy (MBE) and metal-organic vap...
GaAs(114)A surfaces were prepared using molecular beam epitaxy followed by annealing in As-2 pressur...
The GaAs(112)A and (1̄1̄2̄)B surfaces have been prepared by molecular-beam epitaxy (MBE) and analyze...
Using ab initio methods (generalized valence bond with small clusters to represent the surface), we ...
\u3cp\u3eA new model is presented for the description of the surface reconstruction of III-V semicon...
A new model is presented for the description of the surface reconstruction of III-V semiconductors. ...
While the As-rich 2 x 4 reconstruction of GaAs(001) is well explained by the so-called beta(2) struc...
We have studied the reconstruction of the (110) surface of various III–V semiconductor compounds (Ga...
GaAs samples with orientations vicinal to (2 5 11) within 1degree were prepared by molecular beam ep...
We present a brief overview of surface structures of high-index GaAs surfaces, putting emphasis on r...
The GaAs((113) over bar)B surfaces were prepared by molecular-beam epitaxy and were in situ studied ...