Bifurcations in a model of monolithic passively mode-locked semiconductor laser

Operation regimes of a two section monolithic quantum dot mode-locked laser are studied theoretically using a model that takes into account carrier exchange between quantum dots and wetting layer. It is shown that when the absorber section length is large enough the laser exhibits bistability between laser off state and different mode-locking regimes. Q-switching instability leading to slow modulation of the mode-locked pulse peak intensity is completely eliminated in this case