Photoluminescence of cw laser-annealed silicon shows a dramatic difference in electronic behavior of the reconstructed material depending upon either creation or suppression of dislocations. Beyond a critical exposure time slip appears, and the luminescence of these samples is dominated by dislocation-related defect levels
The physical and electrical properties of ion implanted silicon annealed with high powered ruby lase...
Irradiation-induced defects in silicon, using low temperature photoluminescence as a probe of defect...
We probe the extent to which dislocations reduce carrier lifetimes and alter luminescence and growth...
Photoluminescence of cw laser-annealed silicon shows a dramatic difference in electronic behavior of...
High-voltage electron microscopy (HVEM) has been used for the investigation of the defect structure ...
Cathodoluminescence is used to investigate the phenomenon of relatively efficient band-to-band lumin...
This thesis presents an investigation of the phenomenon of efficient, room temperature luminescence ...
In view of demonstrating the technical feasibility of silicon based, high efficiency room temperatur...
We report the detection of laser-induced damage in laser-doped layers at the surface of crystalline ...
The introduction of optically active defects (such as atomic clusters, dislocations, precipitates) i...
We report new observations on cw laser annealing of ion implanted Silicon which have enabled us to d...
Cathodoluminescence has been used to investigate room-temperature light emission from dislocations g...
A common technique for introducing rare earth atoms into Si and related materials for photonic appli...
Cathodoluminescence (CL) has been used to investigate room-temperature light emission from dislocati...
On a étudié l'influence des conditions de déformation plastique sur 1'intensité de différentes ligne...
The physical and electrical properties of ion implanted silicon annealed with high powered ruby lase...
Irradiation-induced defects in silicon, using low temperature photoluminescence as a probe of defect...
We probe the extent to which dislocations reduce carrier lifetimes and alter luminescence and growth...
Photoluminescence of cw laser-annealed silicon shows a dramatic difference in electronic behavior of...
High-voltage electron microscopy (HVEM) has been used for the investigation of the defect structure ...
Cathodoluminescence is used to investigate the phenomenon of relatively efficient band-to-band lumin...
This thesis presents an investigation of the phenomenon of efficient, room temperature luminescence ...
In view of demonstrating the technical feasibility of silicon based, high efficiency room temperatur...
We report the detection of laser-induced damage in laser-doped layers at the surface of crystalline ...
The introduction of optically active defects (such as atomic clusters, dislocations, precipitates) i...
We report new observations on cw laser annealing of ion implanted Silicon which have enabled us to d...
Cathodoluminescence has been used to investigate room-temperature light emission from dislocations g...
A common technique for introducing rare earth atoms into Si and related materials for photonic appli...
Cathodoluminescence (CL) has been used to investigate room-temperature light emission from dislocati...
On a étudié l'influence des conditions de déformation plastique sur 1'intensité de différentes ligne...
The physical and electrical properties of ion implanted silicon annealed with high powered ruby lase...
Irradiation-induced defects in silicon, using low temperature photoluminescence as a probe of defect...
We probe the extent to which dislocations reduce carrier lifetimes and alter luminescence and growth...
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