Memristive devices with a large memory margin based on nanocrystalline organic-inorganic hybrid CH3NH3PbBr3 perovskite active layer

Perovskite materials have been utilized as promising active materials for memristive devices due to their excellent properties. However, most reported perovskite-based memristive devices exhibit relatively low current ON/OFF ratios, which limits their practical applications in memory devices. In this work, memristive devices with a large memory margin were fabricated utilizing a CH3NH3PbBr3 (MAPbBr(3) ) perovskite layer. The nanocrystalline MAPbBr(3) perovskite thin films were successfully formed at low temperature by using a chlorobenzene dripping method. The MAPbBr(3) perovskite layer was employed as a resistive switching layer in memristive devices with a structure of indium-tin-oxide/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/MAPbBr(3)/Al. The maximum ON/OFF ratio of the memristive devices based on the MAPbBr(3) perovskite was as large as 3.6 x 10(6). The memristive devices showed high device-to-device reproducibility with set-voltage distributions between -0.5 and -0.8 V, as well as good endurances of at least 120 cycles and retention times longer than 1 x 10(4) s. The carrier transport mechanisms of the memristive devices were described on the basis of the I-V curves, and their operating mechanisms were explained via the formation and rupture of filaments in the MAPbBr(3) perovskite.This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2016R1A2A1A05005502)