Performance of dynamic random access memory (DRAM) has been steadily improved to overcome the concern that the DRAM access time may become the performance bottleneck of a system. Besides, DRAM power consumption has become a critical issue in mobile and server systems. The open page policy is widely used to minimize the memory access latency and the power consumption of the activate and the precharge commands. In this paper, we analyze DRAM power and performance according to memory request characteristics of applications. Especially, we observe that the row buffer access control influences the overall performance and power consumption. Further, the power-delay product (PDP) is sensitive to the row buffer hit ratio and the memory request freq...
Considering that emerging technologies have started to require excessive amount of memory, with quic...
DRAM-based main memories have read operations that destroy the read data, and as a result, must buff...
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Compute...
© 2021 by the Association for Computing Machinery, Inc. This is the accepted manuscript version of a...
In dynamic random access memory (DRAM)-based main memory, access latency is a key performance metric...
AbstractIn current scenario while designing a computing system it is necessary that detailed emphasi...
Dynamic Random Access Memories (DRAM) are the dominant solid-state memory devices used for primary m...
The performance characteristics of modern DRAM memory systems are impacted by two primary attributes...
Modern DRAM devices’ performance and energy efficiency are significantly improved when the ro...
The main memory of modern IT devices mainly uses DRAM to store data. DRAM consists of a MOS transist...
<p>Over the past two decades, the storage capacity and access bandwidth of main memory have improved...
Dynamic Random Access Memories (DRAM) are the dominant solid-state memory devices used for primary m...
The twin demands of energy-efficiency and higher performance on DRAM are highly emphasized in multic...
textContemporary DRAM systems have maintained impressive scaling by managing a careful balance betwe...
In this paper, based on the temporal and spatial locality characteristics of memory accesses in mult...
Considering that emerging technologies have started to require excessive amount of memory, with quic...
DRAM-based main memories have read operations that destroy the read data, and as a result, must buff...
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Compute...
© 2021 by the Association for Computing Machinery, Inc. This is the accepted manuscript version of a...
In dynamic random access memory (DRAM)-based main memory, access latency is a key performance metric...
AbstractIn current scenario while designing a computing system it is necessary that detailed emphasi...
Dynamic Random Access Memories (DRAM) are the dominant solid-state memory devices used for primary m...
The performance characteristics of modern DRAM memory systems are impacted by two primary attributes...
Modern DRAM devices’ performance and energy efficiency are significantly improved when the ro...
The main memory of modern IT devices mainly uses DRAM to store data. DRAM consists of a MOS transist...
<p>Over the past two decades, the storage capacity and access bandwidth of main memory have improved...
Dynamic Random Access Memories (DRAM) are the dominant solid-state memory devices used for primary m...
The twin demands of energy-efficiency and higher performance on DRAM are highly emphasized in multic...
textContemporary DRAM systems have maintained impressive scaling by managing a careful balance betwe...
In this paper, based on the temporal and spatial locality characteristics of memory accesses in mult...
Considering that emerging technologies have started to require excessive amount of memory, with quic...
DRAM-based main memories have read operations that destroy the read data, and as a result, must buff...
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Compute...