We investigate the electrical characteristics of Schottky contacts for an Au/hydride vapor phase epitaxy (HVPE) a-plane GaN template grown via in situ GaN nanodot formation. Although the Schottky diodes present excellent rectifying characteristics, their Schottky barrier height and ideality factor are highly dependent upon temperature variation. The relationship between the barrier height, ideality factor, and conventional Richardson plot reveals that the Schottky diodes exhibit an inhomogeneous barrier height, attributed to the interface states between the metal and a-plane GaN film and to point defects within the a-plane GaN layers grown via in situ nanodot formation. Also, we confirm that the current transport mechanism of HVPE a-plane G...
Au/0.8 nm–GaN/n–GaAs Schottky diodes were manufactured and electrically characterized over a wide te...
International audienceIn this paper, we have studied Au/n-GaN Schottky diodes. The substrates are re...
International audienceIn this paper, we have studied Au/n-GaN Schottky diodes. The substrates are re...
We investigate the electrical characteristics of Schottky contacts for an Au/hydride vapor phase epi...
We investigate the electrical characteristics of Schottky contacts for an Au/hydride vapor phase epi...
Electrical and deep level defects have been investigated in GaN Schottky barrier diode (SBD) in the ...
In the present work, the I-V characteristics of Ni/GaN Schottky diodes have been studied. The Schott...
The possible origins of leaky characteristics of Schottky barrier on p-GaN have been investigated. T...
Current transport mechanism in Au/Ni/GaN Schottky diodes has been investigated using current-voltage...
In the present work, the I-V characteristics of Ni/GaN Schottky diodes have been studied. The Schott...
International audienceIn this paper, we have studied Au/n-GaN Schottky diodes. The substrates are re...
[[abstract]]Effects of a thin native oxide layer on Au/Ni/n-type GaN Schottky diodes were investigat...
[[abstract]]The current-voltage characteristics of n-type GaN Schottky diodes have been measured in ...
International audienceIn this paper, we have studied Au/n-GaN Schottky diodes. The substrates are re...
Abstract—The possible origins of leaky characteristics of Schottky barrier on p-GaN have been invest...
Au/0.8 nm–GaN/n–GaAs Schottky diodes were manufactured and electrically characterized over a wide te...
International audienceIn this paper, we have studied Au/n-GaN Schottky diodes. The substrates are re...
International audienceIn this paper, we have studied Au/n-GaN Schottky diodes. The substrates are re...
We investigate the electrical characteristics of Schottky contacts for an Au/hydride vapor phase epi...
We investigate the electrical characteristics of Schottky contacts for an Au/hydride vapor phase epi...
Electrical and deep level defects have been investigated in GaN Schottky barrier diode (SBD) in the ...
In the present work, the I-V characteristics of Ni/GaN Schottky diodes have been studied. The Schott...
The possible origins of leaky characteristics of Schottky barrier on p-GaN have been investigated. T...
Current transport mechanism in Au/Ni/GaN Schottky diodes has been investigated using current-voltage...
In the present work, the I-V characteristics of Ni/GaN Schottky diodes have been studied. The Schott...
International audienceIn this paper, we have studied Au/n-GaN Schottky diodes. The substrates are re...
[[abstract]]Effects of a thin native oxide layer on Au/Ni/n-type GaN Schottky diodes were investigat...
[[abstract]]The current-voltage characteristics of n-type GaN Schottky diodes have been measured in ...
International audienceIn this paper, we have studied Au/n-GaN Schottky diodes. The substrates are re...
Abstract—The possible origins of leaky characteristics of Schottky barrier on p-GaN have been invest...
Au/0.8 nm–GaN/n–GaAs Schottky diodes were manufactured and electrically characterized over a wide te...
International audienceIn this paper, we have studied Au/n-GaN Schottky diodes. The substrates are re...
International audienceIn this paper, we have studied Au/n-GaN Schottky diodes. The substrates are re...