Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

The invention relates to a method of manufacturing a semiconductor device (10) with a semiconductor body (1) which is provided with at least one semiconductor element, wherein on the surface of the semiconductor body (1) a mesa- shaped semiconductor region (2) is formed, a masking layer (3) is deposited over the mesa-shaped semiconductor region (2), a part (3A) of the masking layer (3) is removed that borders a side surface of the mesa-shaped semiconductor region (2) near its top and an electrically conducting connection region (4) is formed on the resulting structure forming a contact for the mesa-shaped semiconductor region (2). According to the invention after removal of said part (3A) of the masking layer (3) but before formation of the electrically conducting connection region (4) the mesa- shaped semiconductor region (2) is widened by an additional semiconductor region (5) at the side surface of the mesa- shaped semiconductor region (2) freed by removal of said part (3A) of the masking layer (3). In this way device (10) having a very low contact resistance are obtainable in a simple manner. Preferably the mesa-shaped semiconductor region (2) is formed a nano-wire by a further epitaxial growth process like VLS. The additional region (5) may be obtained e.g. by MOVP