Add to ORKG\u3cp\u3eIt is shown that different TE/TM mode confinement factors in a bulk semiconductor optical amplifier could not be the main reason for the gain anisotropy, Instead, the intrinsic material gain difference for TE/TM polarised light can well account for this anisotropy and its dependence on pump current.\u3c/p\u3
An experimental study of polarisation rotation in a semiconductor optical amplifier is presented. Tw...
The polarization dependence of gain dynamics in a bulk semiconductor optical amplifier has been inve...
Many practical laser amplifiers exhibit anisotropic gain due to polarization of the pumping fields o...
It is shown that different TE/TM mode confinement factors in a bulk semiconductor optical amplifier ...
It is shown that different TE/TM mode confinement factors in a bulk semiconductor optical amplifier ...
We derive formulas for the optical confinement factor Gamma from Maxwell's equations for TE and TM m...
International audienceBulk InGaAs layer under slight tensile strain, embedded in InGaAsP barriers an...
We have directly measured, under operating conditions, the distributions of carrier densities and te...
peer-reviewedNonlinear polarization rotation (NPR) in semiconductor optical amplifiers (SOAs) has ap...
We investigate the power and the polarization dependence of the intraband dynamics in a bulk semico...
[EN] Indirect bandgap semiconductors such as silicon are not efficient light emitters because a phon...
The theoretical optimization of tensile strained InGaAsP/InGaAsP MQW for 1.5μm window polarization-i...
We present a model for polarization-dependent gain saturation in strained bulk semiconductor optical...
We present a model for polarization-dependent gain saturation in strained bulk semiconductor optical...
A new identity is derived which relates the gain and the field distribution (or confinement factor) ...
An experimental study of polarisation rotation in a semiconductor optical amplifier is presented. Tw...
The polarization dependence of gain dynamics in a bulk semiconductor optical amplifier has been inve...
Many practical laser amplifiers exhibit anisotropic gain due to polarization of the pumping fields o...
It is shown that different TE/TM mode confinement factors in a bulk semiconductor optical amplifier ...
It is shown that different TE/TM mode confinement factors in a bulk semiconductor optical amplifier ...
We derive formulas for the optical confinement factor Gamma from Maxwell's equations for TE and TM m...
International audienceBulk InGaAs layer under slight tensile strain, embedded in InGaAsP barriers an...
We have directly measured, under operating conditions, the distributions of carrier densities and te...
peer-reviewedNonlinear polarization rotation (NPR) in semiconductor optical amplifiers (SOAs) has ap...
We investigate the power and the polarization dependence of the intraband dynamics in a bulk semico...
[EN] Indirect bandgap semiconductors such as silicon are not efficient light emitters because a phon...
The theoretical optimization of tensile strained InGaAsP/InGaAsP MQW for 1.5μm window polarization-i...
We present a model for polarization-dependent gain saturation in strained bulk semiconductor optical...
We present a model for polarization-dependent gain saturation in strained bulk semiconductor optical...
A new identity is derived which relates the gain and the field distribution (or confinement factor) ...
An experimental study of polarisation rotation in a semiconductor optical amplifier is presented. Tw...
The polarization dependence of gain dynamics in a bulk semiconductor optical amplifier has been inve...
Many practical laser amplifiers exhibit anisotropic gain due to polarization of the pumping fields o...