A high-resolution study of two-dimensional oxidation-enhanced diffusion in silicon

Van Dort, M
Lifka, H
Zalm, PC
de Kruif, R CM
Boer, Wiebe B De
Woerlee, PH Pierre
Juffermans, CAH
Walker, AJ
Slotboom, JW
Cowern, N E B

Publication date

January 1993

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Abstract

\u3cp\u3eA new method for the determination of two-dimensional oxidation-enhanced diffusion (OED) is presented. The resolution of the technique in the lateral direction is ≈ 10 nm. The technique is used to study the influence of the gate reoxidation step on the channel profile of MOSFET's. For boron, it will be shown that the lateral extent of OED depends on the depth. The same technique is used to study segregation of boron during the lateral oxidation of the polysilicon gate.\u3c/p\u3

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A high-resolution study of two-dimensional oxidation-enhanced diffusion in silicon

Abstract

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A high-resolution study of two-dimensional oxidation-enhanced diffusion in silicon

Abstract

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