Add to ORKG\u3cp\u3eDistortion measurements up to 1 GHz ground tone for 3 different sub-micron CMOS technologies with minimum gatelengths down to 0.18 μm comply well with an accurate compact model. Using a new linearity figure of merit measurements are presented, which show that up to 1 GHz a high linearity at practical bias conditions is obtained because the distortion still predominantly originates from the nonlinear IV characteristics.\u3c/p\u3
The implications for RF circuit design of the nonlinear behaviour of a MOSFET transistor over all re...
The paper presents a simplified approach for the evaluation of mild distortion in highly linear powe...
Computer Aided Design of high frequency circuits requires a coherent component modelling strategy if...
\u3cp\u3eThe distortion behaviour of MOSFETs is important for RF-applications. In this paper the inf...
Abstract—We describe a measurement comparison of distortion in a complementary metal-oxide semicondu...
\u3cp\u3eThe impact of scaling on the analog performance of MOS devices at RF frequencies was studie...
Radio frequency (RF) circuit elements that are traditionally considered to be linear frequently exhi...
This thesis presents work on the development of low distortion circuits using cold biassed FETs for ...
An experimental comparative study of nonlinear distortion effects in 26-40 GHz frequency band on tel...
All RF circuits that incorporate active devices exhibit nonlinear behavior. Nonlinearities result in...
The amplifiers are the vital part of the analog circuit designs. The linearity of the CMOS is of mos...
An experimental comparative study of nonlinear distortion effects in 26-40 GHz frequency band on tel...
High linearity CMOS radio receivers often exploit linear V-I conversion at RF, followed by passive d...
All transistor circuits introduce distortion. In Radio Frequency (RF) circuits, the third-order dist...
The implications for radio frequency circuit design of the nonlinear behavior of a MOSFET transistor...
The implications for RF circuit design of the nonlinear behaviour of a MOSFET transistor over all re...
The paper presents a simplified approach for the evaluation of mild distortion in highly linear powe...
Computer Aided Design of high frequency circuits requires a coherent component modelling strategy if...
\u3cp\u3eThe distortion behaviour of MOSFETs is important for RF-applications. In this paper the inf...
Abstract—We describe a measurement comparison of distortion in a complementary metal-oxide semicondu...
\u3cp\u3eThe impact of scaling on the analog performance of MOS devices at RF frequencies was studie...
Radio frequency (RF) circuit elements that are traditionally considered to be linear frequently exhi...
This thesis presents work on the development of low distortion circuits using cold biassed FETs for ...
An experimental comparative study of nonlinear distortion effects in 26-40 GHz frequency band on tel...
All RF circuits that incorporate active devices exhibit nonlinear behavior. Nonlinearities result in...
The amplifiers are the vital part of the analog circuit designs. The linearity of the CMOS is of mos...
An experimental comparative study of nonlinear distortion effects in 26-40 GHz frequency band on tel...
High linearity CMOS radio receivers often exploit linear V-I conversion at RF, followed by passive d...
All transistor circuits introduce distortion. In Radio Frequency (RF) circuits, the third-order dist...
The implications for radio frequency circuit design of the nonlinear behavior of a MOSFET transistor...
The implications for RF circuit design of the nonlinear behaviour of a MOSFET transistor over all re...
The paper presents a simplified approach for the evaluation of mild distortion in highly linear powe...
Computer Aided Design of high frequency circuits requires a coherent component modelling strategy if...