The reaction mechanism of producing hydrogen via water splitting on the different surfaces of cubic silicon carbide (3C-SiC), the adsorption energy and the activation energy have been studied here by using density functional theory. The results indicated that the adsorption behavior of water molecule could take place on 3C-SiC's different surfaces and it leads to the surface reconstruction. Besides, the water splitting reaction is found to be a thermally activated process, and the first hydrogen atom is easier decomposing from the adsorbed water molecule than the second one for most of the 3C-SiC surfaces. Furthermore, the water molecule that splitting on 3C-SiC (1 1 1) surface requires relatively small activation energy by contrast with ot...
The effect chlorine addition to the gas mixture has on the surface chemistry in the chemical vapour ...
Silicon carbide is a wide bandgap semiconductor with unique characteristics suitable for high temper...
Recent experiments on the silicon terminated (3x2)-SiC(100) surface indicated an unexpected metallic...
The reaction mechanism of producing hydrogen via water splitting on the different surfaces of cubic ...
The absolute surface energies of three major low index surfaces of cubic silicon carbide (3C-SiC) ar...
Silicon carbide (SiC), owing to its extraordinary chemical stability and refractory properties, is w...
Good understanding of the reaction mechanism in the electrochemical reduction of water to hydrogen i...
Oxidation of water on the 3C-SiC(111) surface is studied using density functional theory calculation...
Silicon carbide is a semiconductor material with ideal properties for high-temperature and high-powe...
In 1972 Fujishima and Honda conceptualised a photoelectrochemical cell for hydrogen generation via P...
Silicon carbide is a wide bandgap semiconductor ideally suitable for high temperature and high power...
Journal ArticleWe perform first-principles calculations to explore the physical origin of hydrogen-i...
Efficient electrochemical hydrogen evolution at ultrathin 3C-SiC nanocrystal electrodes in acid solu...
Surmounting the sluggish water oxidation kinetics beyond the hole-dominated thermodynamic effect is ...
A single-domain 3×1 phase induced by hydrogen adsorption on a Si-rich 3C-SiC(001)3×2 surface is inve...
The effect chlorine addition to the gas mixture has on the surface chemistry in the chemical vapour ...
Silicon carbide is a wide bandgap semiconductor with unique characteristics suitable for high temper...
Recent experiments on the silicon terminated (3x2)-SiC(100) surface indicated an unexpected metallic...
The reaction mechanism of producing hydrogen via water splitting on the different surfaces of cubic ...
The absolute surface energies of three major low index surfaces of cubic silicon carbide (3C-SiC) ar...
Silicon carbide (SiC), owing to its extraordinary chemical stability and refractory properties, is w...
Good understanding of the reaction mechanism in the electrochemical reduction of water to hydrogen i...
Oxidation of water on the 3C-SiC(111) surface is studied using density functional theory calculation...
Silicon carbide is a semiconductor material with ideal properties for high-temperature and high-powe...
In 1972 Fujishima and Honda conceptualised a photoelectrochemical cell for hydrogen generation via P...
Silicon carbide is a wide bandgap semiconductor ideally suitable for high temperature and high power...
Journal ArticleWe perform first-principles calculations to explore the physical origin of hydrogen-i...
Efficient electrochemical hydrogen evolution at ultrathin 3C-SiC nanocrystal electrodes in acid solu...
Surmounting the sluggish water oxidation kinetics beyond the hole-dominated thermodynamic effect is ...
A single-domain 3×1 phase induced by hydrogen adsorption on a Si-rich 3C-SiC(001)3×2 surface is inve...
The effect chlorine addition to the gas mixture has on the surface chemistry in the chemical vapour ...
Silicon carbide is a wide bandgap semiconductor with unique characteristics suitable for high temper...
Recent experiments on the silicon terminated (3x2)-SiC(100) surface indicated an unexpected metallic...