In this work, we demonstrate the feasibility to obtain aluminium nitride (AlN) nanostructures by radio frequency magnetron sputtering technique. In particular, nanostructured flower-like morphologies are achieved through a direct growth of AlN films on superhard rhodium boride (RhB) layers deposited by means of pulsed laser deposition (PLD) technique. AlN is deposited at different substrate temperatures in the range 300-500 degrees C in order to investigate the effects on morphology and crystalline structure. The samples are characterized by field emission scanning electron microscopy, atomic force microscopy, X-ray diffraction analysis and photoluminescence measurements. Results reveal nanostructured flower-like morphology of AlN for sampl...
Polycrystalline aluminum nitride films were deposited by reactive radio frequency magnetron sputteri...
International audienceIn order to get homogeneous nanostructured Aluminum Nitride deposits, thin fil...
Approximately 2.2 μm thick aluminum nitride (AlN) thin films were deposited on silicon and glass sub...
In this work, we demonstrate the feasibility to obtain aluminium nitride (AlN) nanostructures by rad...
In this work, we demonstrate the feasibility to obtain aluminium nitride (AlN) nanostructures by rad...
We report structural and optical properties of aluminum nitride (AlN) thin films prepared by RF magn...
We report on multi-stage pulsed laser deposition of aluminum nitride (AlN) on Si (1 0 0) wafers, at ...
Aluminum nitride (AlN) films were prepared by using reactive magnetron sputtering. Substrate tempera...
Aluminium nitride (AlN) thin film is deposited by RF magnetron sputtering using Al sputtering target...
Optically transparent, highly oriented nanocrystalline AlN(002) films have been synthesized using a ...
AlN films on a Si substrate were synthesized by magnetron sputtering method. A dual magnetron system...
Aluminum nitride (AlN) thin films on silicon (Si) (100) substrates are grown by pulsed ...
Aluminum nitride (AlN) thin films on silicon (Si) (100) substrates are grown by pulsed rf magnetron ...
This output describes a technique for fabricating structured coatings using the magnetron sputtering...
AlN films of thicknesses 670–780 nm were deposited on (1 1 1) silicon wafer, (0 0·1) sapphire, float...
Polycrystalline aluminum nitride films were deposited by reactive radio frequency magnetron sputteri...
International audienceIn order to get homogeneous nanostructured Aluminum Nitride deposits, thin fil...
Approximately 2.2 μm thick aluminum nitride (AlN) thin films were deposited on silicon and glass sub...
In this work, we demonstrate the feasibility to obtain aluminium nitride (AlN) nanostructures by rad...
In this work, we demonstrate the feasibility to obtain aluminium nitride (AlN) nanostructures by rad...
We report structural and optical properties of aluminum nitride (AlN) thin films prepared by RF magn...
We report on multi-stage pulsed laser deposition of aluminum nitride (AlN) on Si (1 0 0) wafers, at ...
Aluminum nitride (AlN) films were prepared by using reactive magnetron sputtering. Substrate tempera...
Aluminium nitride (AlN) thin film is deposited by RF magnetron sputtering using Al sputtering target...
Optically transparent, highly oriented nanocrystalline AlN(002) films have been synthesized using a ...
AlN films on a Si substrate were synthesized by magnetron sputtering method. A dual magnetron system...
Aluminum nitride (AlN) thin films on silicon (Si) (100) substrates are grown by pulsed ...
Aluminum nitride (AlN) thin films on silicon (Si) (100) substrates are grown by pulsed rf magnetron ...
This output describes a technique for fabricating structured coatings using the magnetron sputtering...
AlN films of thicknesses 670–780 nm were deposited on (1 1 1) silicon wafer, (0 0·1) sapphire, float...
Polycrystalline aluminum nitride films were deposited by reactive radio frequency magnetron sputteri...
International audienceIn order to get homogeneous nanostructured Aluminum Nitride deposits, thin fil...
Approximately 2.2 μm thick aluminum nitride (AlN) thin films were deposited on silicon and glass sub...