A low noise amplifier operating in the 8.5÷11.5 GHz (X Band) was designed and realized. The LNA uses the AlGaN/GaN HEMT technology provided by the Leonardo foundry. The low noise amplifier is composed by a cascaded of three single-ended stages. The realized MMIC amplifier has the following measured performance: 24.7dB small-signal gain with a ±1 dB ripple; a noise figure ranging from 1.6 dB to 1.8 dB in the upper half of the X Band, and reaching 2.1 dB full band; a 1-dB output compression point of 26.7 dBm was obtained. Chip size is 3.0x1.5 mm2. The design approach implemented is focused on maximizing overall gain and noise performance, as well as obtaining a good level of output power
In this paper, two Low Noise Amplifiers designed in Gallium Nitride HEMT MMIC technology are present...
Gallium-Nitride technology is known for its high power density and power amplifier designs, but is a...
A highly linear low-noise amplifier (LNA) based on a commercial Gallium Nitride (GaN) high electron ...
A low noise amplifier operating in the 8.5÷11.5 GHz (X Band) was designed and realized. The LNA uses...
This paper presents a low-noise amplifier (LNA) operating between 8-11 GHz. Measurement results show...
Besides the well known outstanding characteristics in terms of power density and thermal behavior, w...
In this paper a GaN-on-Si MMIC Low-Noise Amplifier (LNA) working in the Ka-band is shown. The chosen...
This work presents MMIC low-noise amplifiers based an AlGaN/GaN HEMT technology on SiC substrate for...
This paper describes X-Band power amplifier (PA), low noise amplifier (LNA) and switches that can be...
Abstract — This work presents MMIC low-noise amplifiers based on AlGaN/GaN HEMT technology on SiC su...
A 3-16 GHz wideband AlGaN/GaN high electron mobility transistor (HEMT) low noise amplifier (LNA), ...
As well as largely exploited for microwave high-power applications, aluminum gallium nitride (AlGaN)...
In this work, a Ka-Band MMIC LNA designed with two different gate length GaN-on-Si devices is shown....
In this paper, an overview of recently reported low-noise amplifiers (LNAs), designed, and fabricate...
In this paper, two Low Noise Amplifiers designed in Gallium Nitride HEMT MMIC technology are present...
Gallium-Nitride technology is known for its high power density and power amplifier designs, but is a...
A highly linear low-noise amplifier (LNA) based on a commercial Gallium Nitride (GaN) high electron ...
A low noise amplifier operating in the 8.5÷11.5 GHz (X Band) was designed and realized. The LNA uses...
This paper presents a low-noise amplifier (LNA) operating between 8-11 GHz. Measurement results show...
Besides the well known outstanding characteristics in terms of power density and thermal behavior, w...
In this paper a GaN-on-Si MMIC Low-Noise Amplifier (LNA) working in the Ka-band is shown. The chosen...
This work presents MMIC low-noise amplifiers based an AlGaN/GaN HEMT technology on SiC substrate for...
This paper describes X-Band power amplifier (PA), low noise amplifier (LNA) and switches that can be...
Abstract — This work presents MMIC low-noise amplifiers based on AlGaN/GaN HEMT technology on SiC su...
A 3-16 GHz wideband AlGaN/GaN high electron mobility transistor (HEMT) low noise amplifier (LNA), ...
As well as largely exploited for microwave high-power applications, aluminum gallium nitride (AlGaN)...
In this work, a Ka-Band MMIC LNA designed with two different gate length GaN-on-Si devices is shown....
In this paper, an overview of recently reported low-noise amplifiers (LNAs), designed, and fabricate...
In this paper, two Low Noise Amplifiers designed in Gallium Nitride HEMT MMIC technology are present...
Gallium-Nitride technology is known for its high power density and power amplifier designs, but is a...
A highly linear low-noise amplifier (LNA) based on a commercial Gallium Nitride (GaN) high electron ...