Add to ORKGIn this work an innovative GaN HEMT technology based on a scalable Gate Length (80nm, 150nm and 250nm) process with complementary integration of a Schottky Field Plate (FP) is presented. The characterization results are compared between different Gate Lengths and FP topologies configurations, fabricated on the same wafer. In particular, remarkable low noise performances (NF min=0.87dB, G ASS=10.5dB @ 10GHz) have been measured with an L G=250nm device without FP, while with the additional FP protection a minimum NF min=1.5dB and G ASS=13.5dB have been reached. © 2011 EUROPEAN MICROWAVE ASSOC
This paper gives the state-of-the-art (SOA) of the technological development and the reliability sta...
In the frame ofthis work, the fundamental properties of GaN/AlGaN HEMT structures have been investig...
In this paper a Gallium Nitride MMIC technology for RF- and microwave and high power amplifiers base...
In this work an innovative GaN HEMT technology based on a scalable Gate Length (80nm, 150nm and 250n...
Field-plated structures can dramatically improve power capacity of GaN HEMT devices. In this paper, ...
The thesis presents low frequency noise (LFN) characterization of Gallium Nitride (GaN) High Electro...
In this paper, we report the optimum power performance of GaN based high-electron-mobility-transisto...
In this work, we report GaN high-electron-mobility-transistors (HEMTs) on SiC with field plates of v...
We report a study on AlGaN/GaN HEMT performances optimization by using Γ-Gate technology. The influ...
Les transistors à haute mobilité électronique à base de GaN (HEMTs) constituent une filière promette...
The development of recessed 0.25-µm gate length AlGaN/GaN HEMTs on 3-inch SiC substrates for high po...
High Electron Mobility Transistors (HEMTs) based on Gallium Nitride (GaN) and grown on Silicon (Si) ...
The thesis considers design of low phase noise oscillators, given the boundary condition of the used...
One of the main expected benefits of AlGaN HEMT technology for microwave applications is related to ...
127 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2004.AlGaN/GaN high electron mobil...
This paper gives the state-of-the-art (SOA) of the technological development and the reliability sta...
In the frame ofthis work, the fundamental properties of GaN/AlGaN HEMT structures have been investig...
In this paper a Gallium Nitride MMIC technology for RF- and microwave and high power amplifiers base...
In this work an innovative GaN HEMT technology based on a scalable Gate Length (80nm, 150nm and 250n...
Field-plated structures can dramatically improve power capacity of GaN HEMT devices. In this paper, ...
The thesis presents low frequency noise (LFN) characterization of Gallium Nitride (GaN) High Electro...
In this paper, we report the optimum power performance of GaN based high-electron-mobility-transisto...
In this work, we report GaN high-electron-mobility-transistors (HEMTs) on SiC with field plates of v...
We report a study on AlGaN/GaN HEMT performances optimization by using Γ-Gate technology. The influ...
Les transistors à haute mobilité électronique à base de GaN (HEMTs) constituent une filière promette...
The development of recessed 0.25-µm gate length AlGaN/GaN HEMTs on 3-inch SiC substrates for high po...
High Electron Mobility Transistors (HEMTs) based on Gallium Nitride (GaN) and grown on Silicon (Si) ...
The thesis considers design of low phase noise oscillators, given the boundary condition of the used...
One of the main expected benefits of AlGaN HEMT technology for microwave applications is related to ...
127 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2004.AlGaN/GaN high electron mobil...
This paper gives the state-of-the-art (SOA) of the technological development and the reliability sta...
In the frame ofthis work, the fundamental properties of GaN/AlGaN HEMT structures have been investig...
In this paper a Gallium Nitride MMIC technology for RF- and microwave and high power amplifiers base...