This contribution reports the design of an X-band MMIC power amplifier in a 0.25 um GaN technology, proposing for the first time a harmonic manipulation approach on a class C bias condition. Output network provides the power matching condition at fundamental frequency and an open circuit condition at the 3rd harmonic; the correct phase ratio between drain current components is assured by the proper input 2nd harmonic impedance. This solution allows to reach an efficiency higher than 60% in the frequency band 8.5 GHz–9.5 GHz
This paper describes a balanced AlGaN/GaN HEMT single-stage power amplifier demonstrator for X-band ...
The 49th European Microwave Conference, Paris, France, 29 September - 4 October 2019In this paper, w...
Abstract-Two simple class-F NVI1VIIC power amplifiers are described using 0.7tm field-plated GaN HEM...
This contribution reports the design of an X-band MMIC power amplifier in a 0.25 um GaN technology, ...
This paper presents an X-band GaN HEMT power amplifier with a third harmonic-tuned circuit for a hig...
We present a wideband GaN MMIC power amplifier, designed to be the unit cell of a balanced module. A...
The development of two GaN MMIC power amplifiers is reported. The amplifiers are processed in the Al...
The development of two GaN MMIC power amplifiers is reported. The amplifiers are processed in the Al...
In this paper, we present a linearity and efficiency investigation of a GaN MMIC power amplifier (PA...
Starting from the mathematical bases of waveform engineering, this contribution demonstrates the eff...
In this paper, we present a linearity and efficiency investigation of a GaN MMIC power amplifier (PA...
Abstract—This paper describes a power amplifier operating at X-band demonstrating 61 % power added e...
This paper describes X-Band power amplifier (PA), low noise amplifier (LNA) and switches that can be...
Abstract—This paper presents a performance evaluation of GaN X-Band power amplifiers operating as se...
This paper describes a balanced AlGaN/GaN HEMT single-stage power amplifier demonstrator for X-band ...
The 49th European Microwave Conference, Paris, France, 29 September - 4 October 2019In this paper, w...
Abstract-Two simple class-F NVI1VIIC power amplifiers are described using 0.7tm field-plated GaN HEM...
This contribution reports the design of an X-band MMIC power amplifier in a 0.25 um GaN technology, ...
This paper presents an X-band GaN HEMT power amplifier with a third harmonic-tuned circuit for a hig...
We present a wideband GaN MMIC power amplifier, designed to be the unit cell of a balanced module. A...
The development of two GaN MMIC power amplifiers is reported. The amplifiers are processed in the Al...
The development of two GaN MMIC power amplifiers is reported. The amplifiers are processed in the Al...
In this paper, we present a linearity and efficiency investigation of a GaN MMIC power amplifier (PA...
Starting from the mathematical bases of waveform engineering, this contribution demonstrates the eff...
In this paper, we present a linearity and efficiency investigation of a GaN MMIC power amplifier (PA...
Abstract—This paper describes a power amplifier operating at X-band demonstrating 61 % power added e...
This paper describes X-Band power amplifier (PA), low noise amplifier (LNA) and switches that can be...
Abstract—This paper presents a performance evaluation of GaN X-Band power amplifiers operating as se...
This paper describes a balanced AlGaN/GaN HEMT single-stage power amplifier demonstrator for X-band ...
The 49th European Microwave Conference, Paris, France, 29 September - 4 October 2019In this paper, w...
Abstract-Two simple class-F NVI1VIIC power amplifiers are described using 0.7tm field-plated GaN HEM...