Characterization and modelling of 40 nm mHEMT process up to 110 GHz

An extensive measurement campaign, including DC curves, S-parameters and noise factor has been carried out on a new 40 nm gate length GaAs mHEMT technology under development by OMMIC. For the first time this technology is presented. A scalable equivalent-circuit model, also equipped with noise parameters according to Pospieszalski’s approach, has been extracted for the 2 finger family devices. In order to accomplish accurate characterizations of active devices up to very high frequencies, a coplanar TRL calibration kit was specifically designed to be realized on the same substrate as the devices