Theoretical study of As overlayers on InP(110) surface: optical properties

The reflectance anisotropy of the As/InP(110) surface is calculated by using an ab initio plane-wave pseudopotential method. We analyze different models of As coverage, ranging from non-reacted epitaxial layers to exchange-reacted geometries. Comparison with experimental data confirms that the annealed, highly ordered surface phase can be described by an InAs monolayer on the InP substrate (exchange reacted model), whereas the reflectance anisotropy of the as-grown, poorly ordered As/InP surface probably is dominated by disorder effects. (C) 1998 Elsevier Science B.V. All rights reserved