In this paper a novel approach for determining device noise parameters over frequency is presented. Such methodology is made of two parts: the first one allows to straightforwardly extract single-frequency noise parameters from source-pull data; the second one extends this capability to multi-frequency, source-pull data to obtain a full description of device noise behavior over frequency by means of at most ten constant parameters (depending on the required accuracy). The whole process is automated via a software routine and does not need a previous knowledge of the active device equivalent circuit. © 2012 European Microwave Assoc
This thesis has two parts. The first part discuss noise model extraction methods for FETs. The secon...
Dans tout système de télécommunication micro-onde, les performances en bruit représentent un critère...
A method for measuring the four noise parameters of a transistor in the microwave range using a conf...
In this paper a novel approach for determining device noise parameters over frequency is presented. ...
In this paper a novel approach for determining device noise parameters over frequency is presented. ...
In this paper a novel approach for determining device noise parameters over frequency is presented. ...
In this paper a novel approach for determining the four noise parameters of FET devices over frequen...
In this paper a novel approach for determining the four noise parameters of FET devices over frequen...
In this paper a novel approach for determining the four noise parameters of FET devices over frequen...
In this paper a novel approach for determining the four noise parameters of FET devices over frequen...
In this paper a novel approach for determining the four noise parameters of FET devices over frequen...
The dependence of two-port noise temperature on the source reflection factor does not lend itself to...
This paper proposes a new method for microwave two-port noise parameters values extraction. The meth...
Noise parameters are an electrical representation of the noise performance of transistors which is w...
Noise parameters are an electrical representation of the noise performance of transistors which is w...
This thesis has two parts. The first part discuss noise model extraction methods for FETs. The secon...
Dans tout système de télécommunication micro-onde, les performances en bruit représentent un critère...
A method for measuring the four noise parameters of a transistor in the microwave range using a conf...
In this paper a novel approach for determining device noise parameters over frequency is presented. ...
In this paper a novel approach for determining device noise parameters over frequency is presented. ...
In this paper a novel approach for determining device noise parameters over frequency is presented. ...
In this paper a novel approach for determining the four noise parameters of FET devices over frequen...
In this paper a novel approach for determining the four noise parameters of FET devices over frequen...
In this paper a novel approach for determining the four noise parameters of FET devices over frequen...
In this paper a novel approach for determining the four noise parameters of FET devices over frequen...
In this paper a novel approach for determining the four noise parameters of FET devices over frequen...
The dependence of two-port noise temperature on the source reflection factor does not lend itself to...
This paper proposes a new method for microwave two-port noise parameters values extraction. The meth...
Noise parameters are an electrical representation of the noise performance of transistors which is w...
Noise parameters are an electrical representation of the noise performance of transistors which is w...
This thesis has two parts. The first part discuss noise model extraction methods for FETs. The secon...
Dans tout système de télécommunication micro-onde, les performances en bruit représentent un critère...
A method for measuring the four noise parameters of a transistor in the microwave range using a conf...