Add to ORKGIn this contribution, a set of robust GaN MMIC T/R switches and low-noise amplifiers, all based on the same GaN process, is presented. The target operating bandwidths are the X-band and the 2-18 GHz bandwidth. Several robustness tests on the fabricated MMICs demonstrate state-of-the-art survivability to CW input power levels. The development of high-power amplifiers, robust low-noise amplifiers and T/R switches on the same GaN monolithic process will bring to the next generation of fully-integrated T/R module front-end MMICs. © 2014 IAMOT
In this paper a Gallium Nitride MMIC technology for high-power amplifiers between 27 GHz and 101 GHz...
Gallium-Nitride technology is known for its high power density and power amplifier designs, but is a...
In this paper, an overview of recently reported low-noise amplifiers (LNAs), designed, and fabricate...
In this contribution, a set of robust GaN MMIC T/R switches and low-noise amplifiers, all based on t...
Abstract – Apart from delivering very high output powers, GaN can also be used to realize robust rec...
Abstract Gallium-Nitride technology is known for its high power density and power amplifier designs,...
Amplifiers for the next generation of T/R modules in future active array antennas are realized as mo...
This work presents MMIC low-noise amplifiers based an AlGaN/GaN HEMT technology on SiC substrate for...
In this paper, an overview of recently reported low-noise amplifiers (LNAs), designed, and fabricate...
Abstract — This work presents MMIC low-noise amplifiers based on AlGaN/GaN HEMT technology on SiC su...
Power amplifiers for a next generation of T/R-modules in future active array antennas are realized a...
This paper presents a low-noise amplifier (LNA) operating between 8-11 GHz. Measurement results show...
This paper describes X-Band power amplifier (PA), low noise amplifier (LNA) and switches that can be...
Low noise amplifiers realized in GaN technology are focused starting from the basic technology and s...
This paper reports on two wide bandwidth monolithic power amplifiers suitable for electronic warfare...
In this paper a Gallium Nitride MMIC technology for high-power amplifiers between 27 GHz and 101 GHz...
Gallium-Nitride technology is known for its high power density and power amplifier designs, but is a...
In this paper, an overview of recently reported low-noise amplifiers (LNAs), designed, and fabricate...
In this contribution, a set of robust GaN MMIC T/R switches and low-noise amplifiers, all based on t...
Abstract – Apart from delivering very high output powers, GaN can also be used to realize robust rec...
Abstract Gallium-Nitride technology is known for its high power density and power amplifier designs,...
Amplifiers for the next generation of T/R modules in future active array antennas are realized as mo...
This work presents MMIC low-noise amplifiers based an AlGaN/GaN HEMT technology on SiC substrate for...
In this paper, an overview of recently reported low-noise amplifiers (LNAs), designed, and fabricate...
Abstract — This work presents MMIC low-noise amplifiers based on AlGaN/GaN HEMT technology on SiC su...
Power amplifiers for a next generation of T/R-modules in future active array antennas are realized a...
This paper presents a low-noise amplifier (LNA) operating between 8-11 GHz. Measurement results show...
This paper describes X-Band power amplifier (PA), low noise amplifier (LNA) and switches that can be...
Low noise amplifiers realized in GaN technology are focused starting from the basic technology and s...
This paper reports on two wide bandwidth monolithic power amplifiers suitable for electronic warfare...
In this paper a Gallium Nitride MMIC technology for high-power amplifiers between 27 GHz and 101 GHz...
Gallium-Nitride technology is known for its high power density and power amplifier designs, but is a...
In this paper, an overview of recently reported low-noise amplifiers (LNAs), designed, and fabricate...